Optical and Transport Properties of GaN/Al0.15Ga0.85N Quantum Wells (Articolo in rivista)

Type
Label
  • Optical and Transport Properties of GaN/Al0.15Ga0.85N Quantum Wells (Articolo in rivista) (literal)
Anno
  • 2000-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1002/1521-396X(200003)178:1<73::AID-PSSA73>3.0.CO;2-A (literal)
Alternative label
  • M. Lomascolo (a); G. Traetta (a); A. Passaseo (a); M. Longo (a); D. Cannoletta (a); R. Cingolani (a); A. Bonfiglio (b); F. Della Sala (c); A. Di Carlo (c); P. Lugli (c); M. Natali (d); S. K. Sinha (d); M. Berti (d); A. V. Drigo (d); H. Botchkarev (e); and H. Morkoc (e) (2000)
    Optical and Transport Properties of GaN/Al0.15Ga0.85N Quantum Wells
    in Physica status solidi. A, Applied research
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • M. Lomascolo (a); G. Traetta (a); A. Passaseo (a); M. Longo (a); D. Cannoletta (a); R. Cingolani (a); A. Bonfiglio (b); F. Della Sala (c); A. Di Carlo (c); P. Lugli (c); M. Natali (d); S. K. Sinha (d); M. Berti (d); A. V. Drigo (d); H. Botchkarev (e); and H. Morkoc (e) (literal)
Pagina inizio
  • 73 (literal)
Pagina fine
  • 78 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 178 (literal)
Rivista
Note
  • ISI Web of Science (WOS) (literal)
  • Scopu (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • (a) INFM-Dipartimento di Ingegneria dell'Innovazione, UniversitaÁ di Lecce, Italy (b) INFM-Dipartimento di Ingegneria Elettronica, UniversitaÁ di Cagliari, Italy (c) INFM-Dipartimento di Ingegneria Elettronica, UniversitaÁ ªTor Vergataº, Roma, Italy (d) INFM-Dipartimento di Fisica, UniversitaÁ di Padova, Italy (e) Virginia Commonwealth University, Richmond, USA (literal)
Titolo
  • Optical and Transport Properties of GaN/Al0.15Ga0.85N Quantum Wells (literal)
Abstract
  • We have investigated the optical and phototransport properties of GaN/AlGaN quantum wells by photoluminescence and photovoltage spectroscopy. We show that the internal piezoelectric and spontaneous polarization fields cause a strong red-shift of the ground level energy of the quantum wells. Furthermore, identical quantum wells grown on different buffer layers (GaN or AlGaN) exhibit different emission energies, but similar well-width dependence of the n = 1 state, due to the different distribution of strain between well and barrier. The built-in field also causes a strong reduction of the exciton oscillator strength, which is not observable in photovoltage spectra. A long-living (thousands of seconds) charge storage effect is observed in the phototransport spectra due to the presence of point defects, presumably associated to Ga vacancies. (literal)
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