Thin nickel silicide layer formation on Silicon On Insulator (SOI) materials (Articolo in rivista)

Type

• Prodotto della ricerca (Classe)
• Articolo in rivista (Classe)

Label

• Thin nickel silicide layer formation on Silicon On Insulator (SOI) materials (Articolo in rivista) (literal)

Anno

• 2004-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1016/j.mseb.2004.07.029 (literal)

Alternative label

• Alberti A; Cafra B; Bongiorno C; Mannino G; Privitera V; Kammler T; Feudel T. (2004)
  Thin nickel silicide layer formation on Silicon On Insulator (SOI) materials
  in Materials science & engineering. B, Solid-state materials for advanced technology
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Alberti A; Cafra B; Bongiorno C; Mannino G; Privitera V; Kammler T; Feudel T. (literal)

Pagina inizio

• 42 (literal)

Pagina fine

• 45 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 114 (literal)

Rivista

• Materials science & engineering. B, Solid-state materials for advanced technology (Rivista)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• CNR-IMM; AMD (literal)

Titolo

• Thin nickel silicide layer formation on Silicon On Insulator (SOI) materials (literal)

Abstract

• In this work we study the phase transition of 14 and 7 nm thin Ni layers grown on standard silicon and silicon on insulator (SOI) wafers implanted with As. We investigate the thermal stability of the NiSi phase using spike thermal processes which are widely used to preserve shallow junction from dopant diffusion during electrical activation. Nickel reaction has been performed in nitrogen ambient in the temperature range from 450 to 1125 oC and has been characterised by electrical and structural analyses. In spite of the thin layers used, spike annealing processes extend the stability window up to 900 oC preserving the NiSi layer from structural degradation. Moreover, the use of SOI substrates has a favourable impact on the silicide structure that prevents agglomeration and hole formation. (literal)

Prodotto di

• Sviluppo di metodologie avanzate per dispositivi elettronici micro e nanostrutturati (MD.P05.005.001) (Modulo)
• Institute for microelectronics and microsystems (IMM) (Istituto)

Autore CNR

• ALESSANDRA ALBERTI (Persona)
• CORRADO BONGIORNO (Unità di personale interno)
• VITTORIO PRIVITERA (Persona)
• GIOVANNI MANNINO (Persona)

Insieme di parole chiave

• Keywords of "Thin nickel silicide layer formation on Silicon On Insulator (SOI) materials" (Insieme di parole chiave)

Incoming links:

Autore CNR di

• VITTORIO PRIVITERA (Persona)
• GIOVANNI MANNINO (Persona)
• ALESSANDRA ALBERTI (Persona)
• CORRADO BONGIORNO (Unità di personale interno)

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)
• Sviluppo di metodologie avanzate per dispositivi elettronici micro e nanostrutturati (MD.P05.005.001) (Modulo)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Materials science & engineering. B, Solid-state materials for advanced technology (Rivista)

Insieme di parole chiave di

• Keywords of "Thin nickel silicide layer formation on Silicon On Insulator (SOI) materials" (Insieme di parole chiave)