Method and apparatus for producing thin films on a substrate via pulsed electron deposition process (Brevetto)

Type
Label
  • Method and apparatus for producing thin films on a substrate via pulsed electron deposition process (Brevetto) (literal)
Anno
  • 2010-01-01T00:00:00+01:00 (literal)
Alternative label
  • Mazzer, Massimo (1); Gilioli, Edmondo (1); Ferrari, Claudio (1); Bissoli, Francesco (1); Rampino, Stefano (1); Pattini, Francesco (1) (2010)
    Method and apparatus for producing thin films on a substrate via pulsed electron deposition process
    (literal)
Titolo
  • Method and apparatus for producing thin films on a substrate via pulsed electron deposition process (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Mazzer, Massimo (1); Gilioli, Edmondo (1); Ferrari, Claudio (1); Bissoli, Francesco (1); Rampino, Stefano (1); Pattini, Francesco (1) (literal)
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  • CNR (literal)
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  • http://www.wipo.int/patentscope/search/en/detailPdf.jsf?ia=IB2009007528&docIdPdf=id00000010738362&name=(WO2010058281)METHOD%20AND%20APPARATUS%20FOR%20PRODUCING%20THIN%20FILMS%20ON%20A%20SUBSTRATE%20VIA%20A%20PULSED-%20ELECTRON%20DEPOSITION%20PROCESS&woNum=WO2010058281&prevRecNum=1&nextRecNum=2&recNum=1&queryString=ALLNUM%3A%28WO2010058281%29&office=&sortOption=&prevFilter=&maxRec=1 (literal)
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  • Internazionale (literal)
Numero brevetto
  • WO2010058281 (literal)
Anno di deposito
  • 2010 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • (1) CNR-IMEM, Parma (literal)
Titolo
  • Method and apparatus for producing thin films on a substrate via pulsed electron deposition process (literal)
Abstract
  • Pulsed Electron Deposition (PED) is a technique for the growth of conductive and dielectric thin film materials (thickness of few tenths and a few tens of microns). This technique is based on the generation of a pulsed beam of high-energy electrons (1-25 keV), and the subsequent collimation of the material towards a multi-target composed by the desired elemental stoichiometry. The interaction between the beam and the target leads to an evaporation of the material from the target towards a substrate placed parallel to the surface of the target. The stoichiometry of the target is transferred completely to the evaporating phase only if this latter is produced under conditions far from thermodynamic equilibrium. This condition is obtained if the thermal transient achieved on the surface of the target material by the interaction with the e-beam is as high as possible. The surface thermal transient depends on the power of the electron beam, hence on the extraction voltage and on the beam current. This dependence is linear in the case of conductive targets, while in the case of dielectric ones, the thermal transient reaches a maximum value at a given value of current. The novelties of this patent are a method and a device for in situ measurement of the beam current, leading to the possibility of maximizing the ablation process and increasing the reproducibility of the interaction between electrons and target, thus the stoichiometry of the film. Main applications: The device described in the patent can be useful in the field of material physics, especially in the material science area (electronics, sensors, photovoltaic and magnetism), in the case of growth techniques based on electron beams. Main Advantages: The object of this patent is original and innovative, as it introduces a new non-destructive in situ diagnostics for the deposition of thin films by pulsed electron beam technique (PED), also known as PPD (Pulsed Plasma Deposition) or CSA (Channel Spark Ablation). The advantages of the diagnostic method developed are: 1) it does not affect the deposition process, and 2) it allows to know the real-time e-beam current, 3) and hence to control all the variables associated with it (rate control , area of deposition, energy of the evaporated, etc.). (literal)
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