Role of fluorine in suppressing boron transient enhanced diffusion in preamorphized Si (Articolo in rivista)

Type
Label
  • Role of fluorine in suppressing boron transient enhanced diffusion in preamorphized Si (Articolo in rivista) (literal)
Anno
  • 2004-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1063/1.1675935 (literal)
Alternative label
  • Impellizzeri G. (1); dos Santos J. H. R. (1); Mirabella S. (1); Priolo F. (1); Napolitani E. (2); Carnera A. (2) (2004)
    Role of fluorine in suppressing boron transient enhanced diffusion in preamorphized Si
    in Applied physics letters
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Impellizzeri G. (1); dos Santos J. H. R. (1); Mirabella S. (1); Priolo F. (1); Napolitani E. (2); Carnera A. (2) (literal)
Pagina inizio
  • 1862 (literal)
Pagina fine
  • 1864 (literal)
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  • http://dx.doi.org/10.1063/1.1675935 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 84 (literal)
Rivista
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  • 3 (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • (1) MATIS-INFM and Dipartimento di Fisica e Astronomia, Universita` di Catania, Via S. Sofia 64, 95123 Catania, Italy (2) INFM and Dipartimento di Fisica, Universita` di Padova, Via Marzolo 8, 35131 Padova, Italy (literal)
Titolo
  • Role of fluorine in suppressing boron transient enhanced diffusion in preamorphized Si (literal)
Abstract
  • We have explained the role of fluorine in the reduction of the self-interstitial population in a preamorphized Si layer under thermal treatment. For this purpose, we have employed a B spike layer grown by molecular-beam epitaxy as a marker for the self-interstitial local concentration. The amorphized samples were implanted with 7E12, 7E13, or 4E14 F/cm2 at 100 keV, and afterwards recrystallized by solid phase epitaxy. Thermal anneals at 750 or 850 °C were performed in order to induce the release of self-interstitials from the end-of-range ~EOR! defects and thus provoke the transient enhanced diffusion of B atoms. We have shown that the incorporation of F reduces the B enhanced diffusion in a controlled way, up to its complete suppression. It is seen that no direct interaction between B and F occurs, whereas the suppression of B enhanced diffusion is related to the F ability in reducing the excess of silicon self-interstitials emitted by the EOR source. These results are reported and discussed. (literal)
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