Heteroepitaxial Growth of Ge Nanowires on Si Substrates (Articolo in rivista)

Type
Label
  • Heteroepitaxial Growth of Ge Nanowires on Si Substrates (Articolo in rivista) (literal)
Anno
  • 2012-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1155/2012/782835 (literal)
Alternative label
  • Artoni P, Irrera A, Pecora EF, Boninelli S, Spinella C, Priolo F (2012)
    Heteroepitaxial Growth of Ge Nanowires on Si Substrates
    in International Journal of Photoenergy (Print)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Artoni P, Irrera A, Pecora EF, Boninelli S, Spinella C, Priolo F (literal)
Pagina inizio
  • 782835 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#url
  • http://www.hindawi.com/journals/ijp/2012/782835/ (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali
  • 5 (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • 1. MATIS IMM CNR, I-95123 Catania, Italy 2. Univ Catania, Dipartimento Fis & Astron, I-95123 Catania, Italy 3. IMM CNR, I-95121 Catania, Italy (literal)
Titolo
  • Heteroepitaxial Growth of Ge Nanowires on Si Substrates (literal)
Abstract
  • Electron beam evaporation has been used to prepare Ge nanowires (NWs) on top of (111) Si substrates. Despite the non-UHV growth conditions, scanning and transmission electron microscopies demonstrate that NWs are single crystal with specific crystallographic growth directions ([111], [110], and [112]). NWs are faceted, exhibiting the lower energy plans on the surface. The faceting depends on the growth direction. Moreover, the detrimental effects for Ge NWs growth of O atoms contamination are discussed. Finally, we describe how a proper preparation of the Au catalyst is able to increase the Ge NW density by a factor of 4, while heteroepitaxy and faceting features are maintained. (literal)
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