http://www.cnr.it/ontology/cnr/individuo/prodotto/ID174304
Metal-Organic Chemical Vapor Deposition of Phase Change Ge1Sb2Te4 nanowires (Articolo in rivista)
- Type
- Label
- Metal-Organic Chemical Vapor Deposition of Phase Change Ge1Sb2Te4 nanowires (Articolo in rivista) (literal)
- Anno
- 2012-01-01T00:00:00+01:00 (literal)
- Alternative label
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
- Massimo Longo +; Roberto Fallica +; Claudia Wiemer +; Olivier Salicio +; Marco Fanciulli +,?; Enzo Rotunno §; Laura Lazzarini § (literal)
- Pagina inizio
- Pagina fine
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
- Rivista
- Note
- ISI Web of Science (WOS) (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
- + Laboratorio MDM, IMM-CNR, Unita? di Agrate Brianza, Via C. Olivetti 2, 20864 Agrate Brianza, (MB), Italy
? Dipartimento di Scienza dei Materiali, University of Milano Bicocca, Via R. Cozzi, 53, 20126 Milano, Italy
§ IMEM-CNR, Parco Area delle Scienze 37/A - 43124 Parma, Italy (literal)
- Titolo
- Metal-Organic Chemical Vapor Deposition of Phase Change Ge1Sb2Te4 nanowires (literal)
- Abstract
- The self-assembly of Ge1Sb2Te4 nanowires (NWs) for phase change memories application was achieved by metal
organic chemical vapor deposition, catalyzed by Au nanoislands in a narrow range of temperatures and deposition pressures. In
the optimized conditions of 400 °C, 50 mbar, the NWs are Ge1Sb2Te4 single hexagonal crystals. Phase change memory switching
was reversibly induced by nanosecond current pulses through metal-contacted NWs with threshold voltage of about 1.35 V. (literal)
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