Thermo-electrical analysis of an optoelectronic modulator integrated in a SOI rib waveguide operating in the Gb/s regime (Contributo in atti di convegno)

Type

• Prodotto della ricerca (Classe)
• Contributo in atti di convegno (Classe)

Label

• Thermo-electrical analysis of an optoelectronic modulator integrated in a SOI rib waveguide operating in the Gb/s regime (Contributo in atti di convegno) (literal)

Anno

• 2006-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1557/PROC-0934-I10-02 (literal)

Alternative label

• Iodice M, Coppola G, Zaccuri RC (2006)
  Thermo-electrical analysis of an optoelectronic modulator integrated in a SOI rib waveguide operating in the Gb/s regime
  in MRS 2006 Spring meeting, San Francisco
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Iodice M, Coppola G, Zaccuri RC (literal)

Pagina inizio

• 58 (literal)

Pagina fine

• 63 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#url

• http://dx.doi.org/10.1557/PROC-0934-I10-02 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#titoloVolume

• Silicon-Based Microphotonics (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 934 (literal)

Rivista

• MRS proceedings (Rivista)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali

• 6 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• Istituto per la Microelettronica e Microsistemi, Consiglio Nazionale delle RIcerche, Via Pietro Castellino 111, Napoli, N/A, 80131, Italy (literal)

Titolo

• Thermo-electrical analysis of an optoelectronic modulator integrated in a SOI rib waveguide operating in the Gb/s regime (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autoriVolume

• M. Brongersma, D. S. Gardner, M. Lipson, J.H. Shin (literal)

Abstract

• Silicon is the most diffused material for microelectronic industry and, in recent times, it is becoming more and more widespread in integrated optic and optoelectronic fields. We present the thermo-electro-optical analysis of an integrated waveguide-vanishing-based optical modulator based on free-carrier dispersion effect, realizable on standard SOI wafer. The optical behavior is based on the vanishing of the lateral confinement in the rib region, and consequent cut-off of the propagating mode. Results show that an optical modulation depth close to 100% can be reached with a bandwidth of about 154 MHz. Smart electrical driving, that is an injection overdrive of a few volts for a very short time, allows to reach total ON-OFF switching time of about 860 ps. For that bias scheme the fall transient is then limiting the whole dynamic and the resulting bit rate in a pure digital modulation scheme is about 1.2 Gb/s (literal)

Prodotto di

• Microsensori e sistemi di sensing ottici (MD.P05.014.002) (Modulo)
• Institute for microelectronics and microsystems (IMM) (Istituto)

Autore CNR

• GIUSEPPE COPPOLA (Persona)
• MARIO IODICE (Unità di personale interno)

Incoming links:

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)
• Microsensori e sistemi di sensing ottici (MD.P05.014.002) (Modulo)

Autore CNR di

• MARIO IODICE (Unità di personale interno)
• GIUSEPPE COPPOLA (Persona)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• MRS proceedings (Rivista)