Pure and Lu(III)-doped nanocrystalline ZnO films by CVD (Articolo in rivista)

Type
Label
  • Pure and Lu(III)-doped nanocrystalline ZnO films by CVD (Articolo in rivista) (literal)
Anno
  • 2003-01-01T00:00:00+01:00 (literal)
Alternative label
  • Barreca Davide 2, Battiston Giovanni A. 1, Berto Davide 1, Convertino Annalisa 1, Gasparotto Alberto 3, Gerbasi Rosalba 1, Tondello Eugenio 3, Viticoli Sesto 4 Barreca D., Battiston G.A., Berto D., Convertino A., Gasparotto A., Gerbasi R., Tondello E., Viticoli S. (2003)
    Pure and Lu(III)-doped nanocrystalline ZnO films by CVD
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Barreca Davide 2, Battiston Giovanni A. 1, Berto Davide 1, Convertino Annalisa 1, Gasparotto Alberto 3, Gerbasi Rosalba 1, Tondello Eugenio 3, Viticoli Sesto 4 Barreca D., Battiston G.A., Berto D., Convertino A., Gasparotto A., Gerbasi R., Tondello E., Viticoli S. (literal)
Pagina inizio
  • 1153 (literal)
Pagina fine
  • 1160 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 8 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • 1. ICIS - CNR - Padova 2. ISTM - CNR and INSTM -Università di Padova 3. Dipartimento CIMA - Università di Padova 4. ISMN - CNR - Area della ricerca di Roma - Monterotondo (literal)
Titolo
  • Pure and Lu(III)-doped nanocrystalline ZnO films by CVD (literal)
Abstract
  • ZnO thin films were synthesised startin fron Zn(C5H7O2)2 xH2= in O2-N2 atmosphere by low pressure CVD in the temperature range 350-500°C: Lu(III)-doped zinc oxide thin films were deposited at 475°C using Lu(C5H7=2)3 as lutetium precursor, suitably mixed with the zinc precursor. The crystallinity and morphology of the films were analysed by X-Ray Diffraction (XRD) and Atomic Force Microscopy (AFM).Their chemical composition was investigated by X-Ray Photoelectron and X-Ray Excited Auger Electron Spectroscopy (XPS and XE-AES). Optical properties were studied by UV-Vis-NIR spectroscopy. Pure and nanocrystalline ZnO films were obtained, which showed a c-axis orientation for deposition temperatures up to 450°C. Both the presence of oxygen vacancies, whose content could be altered by varying the growth rate, and Lu(III)-doping gave rise to nanocrystalline carbon-free Lu(III)-doped ZnO films, without any appreciable preferred orientation. The doped zinc oxide films evidenced a higher transparency with respect to pure ZnO films. (literal)
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