Reactive pulsed laser deposition of zinc oxide thin films (Articolo in rivista)

Type
Label
  • Reactive pulsed laser deposition of zinc oxide thin films (Articolo in rivista) (literal)
Anno
  • 2004-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1007/s00339-004-2629-7 (literal)
Alternative label
  • Bílková P. ; Mitu B. ; Marotta V. ; Mattei G. ; Orlando S. ; Santagata A. (2004)
    Reactive pulsed laser deposition of zinc oxide thin films
    in Applied physics. A, Materials science & processing (Print); Springer-Verlag, Berlin Heidelberg (Germania)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Bílková P. ; Mitu B. ; Marotta V. ; Mattei G. ; Orlando S. ; Santagata A. (literal)
Pagina inizio
  • 1061 (literal)
Pagina fine
  • 1065 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#url
  • http://www.sciencedirect.com/science/article/pii/S016943320500173X (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 79 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#note
  • fasc. (4-6). Springer. From the issue entitled \"Special issue on “Laser Ablation”. (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali
  • 5 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo
  • 4-6 (literal)
Note
  • ISI Web of Science (WOS) (literal)
  • Scopu (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • 1 Charles University, Faculty of Mathematics and Physics, Department of Macromolecular Physics; VHole?sovi?ck´ach 2,18000 Prague 8, Czech Republic 2 National Institute for Lasers, Plasma and Radiation Physics, Low Temperature Plasma Physics Department, P.O. Box MG 36 Magurele, Bucharest, 76900 Romania 3 CNR - IMIP/PZ, Zona Industriale di Tito Scalo, 85050 Tito Scalo (PZ), Italy 4 CNR - IMIP, P.O.B. 10, 00016 Monterotondo Scalo, Rome, Italy (literal)
Titolo
  • Reactive pulsed laser deposition of zinc oxide thin films (literal)
Abstract
  • Thin films of boron nitride (BN) have been deposited on Si(1 0 0) substrates by reactive pulsed laser ablation (PLA) of a boron target in the presence of a 13.56 MHz radio frequency (RF) nitrogen plasma. The gaseous species have been deposited at several substrate temperatures, using the on-axis configuration. The film properties have been investigated by Scanning Electron Microscopy, Atomic Force Microscopy, Fourier Transformed Infrared Spectroscopy, and X-ray diffraction characterization techniques, and compared to those resulting from the conventional PLA method. The behavior of hexagonal-BN and cubic-BN phases grown by PLA as function of substrate temperature is also reported. (literal)
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