The influence of grain-boundaries on the electronic performance of CVD diamond films (Articolo in rivista)

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Label
  • The influence of grain-boundaries on the electronic performance of CVD diamond films (Articolo in rivista) (literal)
Anno
  • 2005-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1016/j.diamond.2004.12.044 (literal)
Alternative label
  • D.M. Trucchi (a); E. Cappelli (a); G. Conte (b); G. Mattei (a); C. Gramaccioni (c); P. Ascarelli (a) (2005)
    The influence of grain-boundaries on the electronic performance of CVD diamond films
    in Diamond and related materials
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • D.M. Trucchi (a); E. Cappelli (a); G. Conte (b); G. Mattei (a); C. Gramaccioni (c); P. Ascarelli (a) (literal)
Pagina inizio
  • 575 (literal)
Pagina fine
  • 579 (literal)
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  • Proceedings of Diamond 2004, the 15th European Conference on Diamond, Diamond-Like Materials, Carbon Nanotubes, Nitrides and Silicon Carbide (literal)
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  • http://www.sciencedirect.com/science/article/pii/S0925963505000105 (literal)
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  • 14 (literal)
Rivista
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  • faSC. (3-7). Elsevier. Proceedings of Diamond 2004, the 15th European Conference on Diamond, Diamond-Like Materials, Carbon Nanotubes, Nitrides and Silicon Carbide. (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo
  • 3-7 (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • (a) CNR-ISC, Via Salaria km 29.300, 00016 Monterotondo Scalo (Rome), Italy (b) University of Rome “Roma Tre”-Dip. Ing. Elettr., Via della Vasca Navale 84, 00146 Rome, Italy (c) CNR-IC, Via Salaria km 29.300, 00016 Monterotondo (Rome), Italy (literal)
Titolo
  • The influence of grain-boundaries on the electronic performance of CVD diamond films (literal)
Abstract
  • CVD diamond shows interesting perspectives for the production of high-performance radiation detectors and electronic devices. However, due to a polycrystalline structure, the performance of CVD diamond-based devices may be hampered by the low signal-to-noise ratio associated with high level of conductivity. We consider that the level of conductivity correlates with the presence of graphitic impurities within the polycrystalline samples. Assuming that this graphitic phase is concentrated in the free volume of the interfacial crystal grain-boundaries, we show that the graphitic contamination and bulk leakage conductivity can be reduced by increasing the nucleation density. This effect is mainly due to a better filling of the interfacial space by smaller grains induced during the first stage of CVD deposition process. The 60 ?m-thick films were structurally characterized, using Raman spectroscopy and X-ray diffraction (XRD), and electrically by the analysis of room temperature (RT) conductivity and charge collection efficiency, extracted from low-energy X-ray irradiation (8.05 keV). (literal)
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