Boron Diffusion and Electrical Activation in Pre-Amorphized Si Enriched with Fluorine (Contributo in atti di convegno)

Type
Label
  • Boron Diffusion and Electrical Activation in Pre-Amorphized Si Enriched with Fluorine (Contributo in atti di convegno) (literal)
Anno
  • 2007-01-01T00:00:00+01:00 (literal)
Alternative label
  • Impellizzeri G, Mirabella S, Grimaldi MG, Priolo F, Giannazzo F, Raineri V, Napolitani E, Carnera A (2007)
    Boron Diffusion and Electrical Activation in Pre-Amorphized Si Enriched with Fluorine
    in 15th International Conference on Advanced Thermal Processing of Semiconductors, 2007 (RTP 2007), Catania, Italia., OCT 02-05, 2007
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Impellizzeri G, Mirabella S, Grimaldi MG, Priolo F, Giannazzo F, Raineri V, Napolitani E, Carnera A (literal)
Pagina inizio
  • 81 (literal)
Pagina fine
  • 85 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#titoloVolume
  • 15TH IEEE INTERNATIONAL CONFERENCE ON ADVANCED THERMAL PROCESSING OF SEMICONDUCTORS - RTP 2007 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali
  • 5 (literal)
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  • In this work we investigate the promising properties of F in helping the B confinement in pre-amorphized Si, looking into the physical mechanisms acting. We studied also the effect of F on the electrical activity of B-doped junctions in pre-amorphized Si. The carrier dose, measured by four-point probe and Hall effect techniques, lowers because of F, with respect to the sample implanted only with B. To explain the measured B deactivation we employed scanning probe microscopy that allowed to verify a significant F-donor behaviour. Our results clarifies that the physical reason for the lost of holes dose in junctions co-implanted with B and F is not due to a chemical interaction between dopants and F, but simply to a dopant compensation effect. (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • Dip. di Fisica Università di Catania; IMM-CNR Catania (literal)
Titolo
  • Boron Diffusion and Electrical Activation in Pre-Amorphized Si Enriched with Fluorine (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#isbn
  • 978-1-4244-1227-3 (literal)
Abstract
  • In this work we investigate the promising properties of F in helping the B confinement in pre-amorphized Si, looking into the physical mechanisms acting. We studied also the effect of F on the electrical activity of B-doped junctions in pre-amorphized Si. The carrier dose, measured by four-point probe and Hall effect techniques, lowers because of F, with respect to the sample implanted only with B. To explain the measured B deactivation we employed scanning probe microscopy that allowed to verify a significant F-donor behaviour. Our results clarifies that the physical reason for the lost of holes dose in junctions co-implanted with B and F is not due to a chemical interaction between dopants and F, but simply to a dopant compensation effect. (literal)
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