Development of a homoepitaxial technology for fabrication of X- and gamma-ray detectors based on CdTe p-i-n diodes (Contributo in atti di convegno)

Type

• Contributo in atti di convegno (Classe)
• Prodotto della ricerca (Classe)

Label

• Development of a homoepitaxial technology for fabrication of X- and gamma-ray detectors based on CdTe p-i-n diodes (Contributo in atti di convegno) (literal)

Anno

• 2007-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1016/j.nuclphysbps.2006.12.022 (literal)

Alternative label

• Lovergine N, Traversa M, Paiano P, Farella I, Prete P, Cola A, Quaranta F, Mancini AM (2007)
  Development of a homoepitaxial technology for fabrication of X- and gamma-ray detectors based on CdTe p-i-n diodes
  in 3. International Conference on Particle and Fundamental Physics in Space, Beijing, APR 19-21, 2006
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Lovergine N, Traversa M, Paiano P, Farella I, Prete P, Cola A, Quaranta F, Mancini AM (literal)

Pagina inizio

• 262 (literal)

Pagina fine

• 265 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 166 (literal)

Rivista

• Nuclear physics. B, Proceedings supplement (Rivista)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali

• 4 (literal)

Note

• ISI Web of Science (WOS) (literal)
• Scopu (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• Univ Lecce, CNISM, I-73100 Lecce, Italy, Univ Lecce, Dipartimento Ingn Innovaz, I-73100 Lecce, Italy, CNR, IMM, Unita Lecce, I-73100 Lecce, Italy (literal)

Titolo

• Development of a homoepitaxial technology for fabrication of X- and gamma-ray detectors based on CdTe p-i-n diodes (literal)

Abstract

• The growth, processing and electrical characterization of n-type homo-epitaxial CdTe:I layers on detector-grade CdTe single crystal wafers is reported as a preliminary technological step towards the fabrication of CdTe-based p-i-n diode X-/gamma-ray detectors. n-type CdTe:I with resistivities around a few Omega.cm and electron concentrations in the mid 10(16) cm(-3) is demonstrated. Reactive ion etching of the n-type epilayer around the Al electrode proved necessary to improve the I-V characteristic of a Al/n-CdTe:I/i-CdTe/Pt device structure. (literal)

Editore

• Elsevier (Editore)

Prodotto di

• Microsistemi ed optoelettronica a base di semiconduttori composti (MD.P05.014.003) (Modulo)
• Institute for microelectronics and microsystems (IMM) (Istituto)

Autore CNR

• FABIO QUARANTA (Unità di personale interno)
• PAOLA PRETE (Persona)
• ADRIANO COLA (Unità di personale interno)

Incoming links:

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)
• Microsistemi ed optoelettronica a base di semiconduttori composti (MD.P05.014.003) (Modulo)

Autore CNR di

• ADRIANO COLA (Unità di personale interno)
• PAOLA PRETE (Persona)
• FABIO QUARANTA (Unità di personale interno)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Nuclear physics. B, Proceedings supplement (Rivista)

Editore di

• Elsevier (Editore)