Growth of hafnium dioxide thin films by MOCVD using a new series of cyclopentadienyl hafnium compounds (Articolo in rivista)

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  • Growth of hafnium dioxide thin films by MOCVD using a new series of cyclopentadienyl hafnium compounds (Articolo in rivista) (literal)
Anno
  • 2007-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1002/cvde.200706596 (literal)
Alternative label
  • Carta G.; El Habra N; Rossetto G.; Torzo G.; Crociani L.; Natali M.; Zanella P.; Cavinato G.; Mattarello V.; Rigato V.; Kaciulis S.; Mezzi A. (2007)
    Growth of hafnium dioxide thin films by MOCVD using a new series of cyclopentadienyl hafnium compounds
    in Chemical vapor deposition (Print)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Carta G.; El Habra N; Rossetto G.; Torzo G.; Crociani L.; Natali M.; Zanella P.; Cavinato G.; Mattarello V.; Rigato V.; Kaciulis S.; Mezzi A. (literal)
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  • 626 (literal)
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  • 632 (literal)
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  • http://onlinelibrary.wiley.com/doi/10.1002/cvde.200706596/pdf (literal)
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  • 13 (literal)
Rivista
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  • 6 (literal)
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  • 11 (literal)
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  • Two new bis-cyclopentadienyl bis-amino-alkoxide hafnium (IV) precursors have been synthesized and characterized by NMR. These complexes, thanks to the presence of bulky ligands that fully saturate the coordination of the metal center, do not present oligomerization and result in greater stability in air compared to the usually employed Hf(OtBu)4. Moreover, they are less volatile than the respective bis-cyclopentadienyl dialkoxide compounds, thus showing a stronger coordinating power of oxy-nitrogen ligands. HfO2 thin films grown by MOCVD on Si(001) and fused quartz substrates at three different temperatures are well adherent, colorless, and crack-free. Structural and compositional measurements have shown the formation of monoclinic (baddeleyite) HfO2 free from undesired phases. All the films are characterized by a granular surface morphology, with a roughness/thickness ratio that decreases with increasing growth rate. (literal)
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  • ISI Web of Science (WOS) (literal)
  • Scopu (literal)
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  • 1-7 : CNR-ICIS, C.so Stati Uniti, 4 35127 Padova (Italy) / 8 : Dipartimento di Scienze Chimiche, Università di Padova, Via Marzolo, 1, 35131 Padova (Italy) / 9,10 : INFN, Laboratori Nazionali di Legnaro, V.le dell'Università 2 35020 Legnaro, Padova (Italy) / 11,12 : CNR-ISMN, P.O. Box 10, 00016 Monterotondo Stazione (RM) (Italy) (literal)
Titolo
  • Growth of hafnium dioxide thin films by MOCVD using a new series of cyclopentadienyl hafnium compounds (literal)
Abstract
  • Thin films of HfO2 are grown by metal-organic (MO)CVD on Si(001) and fused quartz substrates in the temperature range 400-500 °C, using a new series of bis-cyclopentadienyl bis-amino-alkoxide hafnium precursors, namely [(C5H5)2Hf{OC(CH3)2CH2N(CH3)2}2] and [(C5H5)2Hf{OCH(CH3)CH2N(CH3)2}2], stable in air because of their strong coordination to the metal center. The films obtained are investigated by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), Rutherford backscattering spectroscopy (RBS), and atomic force microscopy (AFM). Monoclinic phase HfO2 (baddeleyite) films, characterized by a correct stoichiometric ratio and a granular surface morphology with a roughness/thickness ratio that decreases with increasing deposition rate, are obtained. (literal)
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