Growth and characterization of ferromagnetic MnAs films on different semiconductor substrates (Articolo in rivista)

Type
Label
  • Growth and characterization of ferromagnetic MnAs films on different semiconductor substrates (Articolo in rivista) (literal)
Anno
  • 2007-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1016/j.jmmm.2007.02.086 (literal)
Alternative label
  • M. Bolzan; I. Bergenti; G. Rossetto; P. Zanella; V. Dediu; M. Natali (2007)
    Growth and characterization of ferromagnetic MnAs films on different semiconductor substrates
    in Journal of magnetism and magnetic materials
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • M. Bolzan; I. Bergenti; G. Rossetto; P. Zanella; V. Dediu; M. Natali (literal)
Pagina inizio
  • 221 (literal)
Pagina fine
  • 224 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#url
  • http://www.sciencedirect.com/science/article/pii/S0304885307001916 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 316 (literal)
Rivista
Note
  • ISI Web of Science (WOS) (literal)
  • Scopu (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • 1, 3, 4, 6: ICIS-CNR, Corso Stati Uniti 4, Padova 35127, Italy 2, 5: ISMN-CNR, Via P Gobetti 101, Bologna 40129, Italy (literal)
Titolo
  • Growth and characterization of ferromagnetic MnAs films on different semiconductor substrates (literal)
Abstract
  • MnAs thin films were grown by metalorganic vapour-phase epitaxy (MOVPE) on GaAs(0 0 1), Si(0 0 1) and oxidised silicon substrates. All films are crystalline and contain only the ferromagnetic a-MnAs phase. X-ray diffraction (XRD) and atomic force microscopy (AFM) measurements show that films on GaAs(0 0 1) have strong preferential orientation, developing elongated grains parallel to [1 –1 0] GaAs while films on bare and oxidised Si are polycrystalline with irregular-shaped, randomly oriented grains. Magneto-optic Kerr effect (MOKE) measurements show good magnetic properties for films on GaAs, such as strong in-plane anisotropy and squareness of the hysteresis loop in the easy direction. A Curie temperature of 340 K, remarkably higher than the bulk material (315 K), was found for a 65 nm thick film on GaAs. Films grown on bare and oxidised silicon wafers had lower Curie temperature and were magnetically isotropic. (literal)
Prodotto di
Autore CNR
Insieme di parole chiave

Incoming links:


Prodotto
Autore CNR di
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi
Insieme di parole chiave di
data.CNR.it