Broadband RF-MEMS Based SPDT (Contributo in atti di convegno)

Type
Label
  • Broadband RF-MEMS Based SPDT (Contributo in atti di convegno) (literal)
Anno
  • 2006-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1109/EUMC.2006.281475 (literal)
Alternative label
  • Di Nardo S, Farinelli P, Giacomozzi F, Mannocchi G, Marcelli R, Margesin B, Mezzanotte P, Mulloni V, Russer P, Sorrentino R, Vitulli F, Vietzorreck L (2006)
    Broadband RF-MEMS Based SPDT
    in 36th European Microwave Conference, EuMW2006, Manchester, UK, 10-15 September 2006
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Di Nardo S, Farinelli P, Giacomozzi F, Mannocchi G, Marcelli R, Margesin B, Mezzanotte P, Mulloni V, Russer P, Sorrentino R, Vitulli F, Vietzorreck L (literal)
Pagina inizio
  • 1727 (literal)
Pagina fine
  • 1730 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#titoloVolume
  • Proceedings of the 36th European Microwave Conference, EuMW2006 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali
  • 4 (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • CNR-IMM Roma Thales Alenia Space Italia, Roma UNI PG TUM, Munchen FBK-irst Trento (literal)
Titolo
  • Broadband RF-MEMS Based SPDT (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#isbn
  • 2-9600551-6-0 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autoriVolume
  • AA.VV. (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#curatoriVolume
  • Editors: Christopher Snowden, Roger Pollard, Pam Vinnicombe (literal)
Abstract
  • A broadband single pole double throw (SPDT) switch has been developed for use in the range of 0 to 30 GHz. The switch consists of a cascade of a MEMS ohmic series and a capacitive shunt switch with floating electrode in each branch. It is manufactured on high-resistive silicon using surface micro-machining technology. The SPDT switch provides an insertion loss better than -0.6 dB, return loss smaller than -20dB, and isolation better than -40 dB in nearly the whole band. A switching voltage around 50 V is needed. The switch is used as a building block for more complex switching networks. The fabrication process is described and the measured RF-performances are reported and discussed. A failure analysis exhibits a lifetime up to 10^9 actuations. (literal)
Editore
Prodotto di
Autore CNR
Insieme di parole chiave

Incoming links:


Autore CNR di
Prodotto
Editore di
Insieme di parole chiave di
data.CNR.it