High temperature memory in (Pb/La)(Zr/Ti)O3 as intrinsic of the relaxor state rather than due to defect relaxation (Articolo in rivista)

Type

• Articolo in rivista (Classe)
• Prodotto della ricerca (Classe)

Label

• High temperature memory in (Pb/La)(Zr/Ti)O3 as intrinsic of the relaxor state rather than due to defect relaxation (Articolo in rivista) (literal)

Anno

• 2006-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1103/PhysRevB.74.024110 (literal)

Alternative label

• Cordero F. 1, Craciun F. 1, Franco A. 1, Galassi C. 2 (2006)
  High temperature memory in (Pb/La)(Zr/Ti)O3 as intrinsic of the relaxor state rather than due to defect relaxation
  in Physical review. B, Condensed matter and materials physics
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Cordero F. 1, Craciun F. 1, Franco A. 1, Galassi C. 2 (literal)

Pagina inizio

• 24110 (literal)

Pagina fine

• 1-8 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#url

• http://link.aps.org/doi/10.1103/PhysRevB.74.024110 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 74 (literal)

Rivista

• Physical review. B, Condensed matter and materials physics (Rivista)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#note

• American Physical Society (APS). (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali

• 8 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo

• 2 (literal)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• (1) CNR-ISC, Istituto dei Sistemi Complessi, Area della Ricerca di Roma - Tor Vergata, Via del Fosso del Cavaliere 100, I-00133 Roma, Italy (2) CNR-ISTEC, Istituto di Scienza e Tecnologia della Ceramica, Via Granarolo 64, I-48018 Faenza, Italy (literal)

Titolo

• High temperature memory in (Pb/La)(Zr/Ti)O3 as intrinsic of the relaxor state rather than due to defect relaxation (literal)

Abstract

• It has been recently shown that the memory of multiple aging stages, a phenomenon considered possible only below the glass transition of some glassy systems, appears also above that temperature range in the relaxor ferroelectric (Pb?La)(Zr?Ti)O3 (PLZT). Doubts exist whether memory at such high temperature is intrinsic of the glassy relaxor state or is rather due to migration of mobile defects. It is shown that the memory in the electric susceptibility and elastic compliance of PLZT 9/65/35 is not enhanced but depressed by mobile defects like O vacancies, H defects, and mobile charges resulting from their ionization. In addition, memory is drastically reduced at La contents slightly below the relaxor region of the phase diagram, unless aging is protracted for long times (months at room temperature). This is considered as evidence that in the nonrelaxor case memory is indeed due to slow migration of defects, while in the La rich case it is intrinsic of the relaxor state, even above the temperature of the susceptibility maximum. (literal)

Prodotto di

• Institute of science and technology for ceramics (ISTEC) (Istituto)
• Processi e materiali per applicazioni elettromeccaniche (SP.P03.007.001) (Modulo)
• Materiali Funzionali e Sistemi Disordinati (MD.P02.003.001) (Modulo)

Autore CNR

• FRANCESCO CORDERO (Unità di personale interno)
• CARMEN GALASSI (Unità di personale interno)
• ANDREA FRANCO (Persona)
• FLORIANA RUSANESCU CRACIUN (Unità di personale interno)

Incoming links:

Prodotto

• Institute of science and technology for ceramics (ISTEC) (Istituto)
• Processi e materiali per applicazioni elettromeccaniche (SP.P03.007.001) (Modulo)
• Materiali Funzionali e Sistemi Disordinati (MD.P02.003.001) (Modulo)

Autore CNR di

• CARMEN GALASSI (Unità di personale interno)
• FRANCESCO CORDERO (Unità di personale interno)
• FLORIANA RUSANESCU CRACIUN (Unità di personale interno)
• ANDREA FRANCO (Persona)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Physical review. B, Condensed matter and materials physics (Rivista)