InP-based lattice-matched InGaAsP and strain-compensated InGaAs/InGaAs quantum well cells for thermophotovoltaic applications (Articolo in rivista)

Type
Label
  • InP-based lattice-matched InGaAsP and strain-compensated InGaAs/InGaAs quantum well cells for thermophotovoltaic applications (Articolo in rivista) (literal)
Anno
  • 2006-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1063/1.2398466 (literal)
Alternative label
  • Rohr C. a; Abbott P. a; Ballard I. a; Connolly J.P. a; Barnham K.W.J. a; Mazzer M. b; Button C. c; Nasi L. d; Hill G. e; Roberts J.S. e; Clarke G. f; Ginige R. g (2006)
    InP-based lattice-matched InGaAsP and strain-compensated InGaAs/InGaAs quantum well cells for thermophotovoltaic applications
    in Journal of applied physics
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Rohr C. a; Abbott P. a; Ballard I. a; Connolly J.P. a; Barnham K.W.J. a; Mazzer M. b; Button C. c; Nasi L. d; Hill G. e; Roberts J.S. e; Clarke G. f; Ginige R. g (literal)
Pagina inizio
  • 114510-1 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#url
  • http://jap.aip.org/resource/1/japiau/v100/i11/p114510_s1 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 100 (literal)
Rivista
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  • 6 (literal)
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  • 11 (literal)
Note
  • ISI Web of Science (WOS) (literal)
  • Scopu (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • a Experimental Solid State Physics, Blackett Laboratory, Imperial College London, London SW7 2BW, United Kingdom; b CNR-IMM, Sezione di Lecce, Via Arnesano, 73100, Lecce, Italy; c Bookham, Towcester, Northants NN12 8EQ, United Kingdom; d CNR-IMEM, Sezione di Parma, Parco Area delle Scienze 37/A, 43010 Fontanini, Parma, Italy; e EPSRC National C?ntre for III-V Technologies, Sheffield S1 3JD, United Kingdom; f IQE Europe Ltd., Cardiff CF3 0EG, United Kingdom; g Tyndall National Institute, Cork, Ireland (literal)
Titolo
  • InP-based lattice-matched InGaAsP and strain-compensated InGaAs/InGaAs quantum well cells for thermophotovoltaic applications (literal)
Abstract
  • Quantum well cells (QWCs) for thermophotovoltaic (TPV) applications are demonstrated in the InGaAsP material system lattice matched to the InP substrate and strain-compensated InGaAs/InGaAs QWCs also on InP substrates. We show that lattice-matched InGaAsP QWCs are very well suited for TPV applications such as with erbia selective emitters. QWCs with the same effective band gap as a bulk control cell show a better voltage performance in both wide and erbialike emission. We demonstrate a QWC with enhanced efficiency in a narrow-band spectrum compared to a bulk heterostructure control cell with the same absorption edge. A major advantage of QWCs is that the band gap can be engineered by changing the well thickness and varying the composition to the illuminating spectrum. This is relatively straightforward in the lattice-matched InGaAsP system. This approach can be extended to longer wavelengths by using strain-compensation techniques, achieving band gaps as low as 0.62 eV that cannot be achieved with lattice-matched bulk material. We show that strain-compensated QWCs have voltage performances that are at least as good as, if not better than, expected from bulk control cells. (literal)
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