Perspectives and advantages of the use of excimer laser annealing for MOS technology (Articolo in rivista)

Type
Label
  • Perspectives and advantages of the use of excimer laser annealing for MOS technology (Articolo in rivista) (literal)
Anno
  • 2006-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1393/ncc/i2006-10006-2 (literal)
Alternative label
  • Privitera V, Alippi P, Camalleri M, Cuscuna M, Fortunato G, La Magna A, La Rosa G, Magri A, Mariucci L, Monakhov E, Salinas D, Simon F, Spinella C, Svensson BG (2006)
    Perspectives and advantages of the use of excimer laser annealing for MOS technology
    in Il Nuovo cimento della Società italiana di fisica. C. Geophysics and space physics (Testo stamp.)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Privitera V, Alippi P, Camalleri M, Cuscuna M, Fortunato G, La Magna A, La Rosa G, Magri A, Mariucci L, Monakhov E, Salinas D, Simon F, Spinella C, Svensson BG (literal)
Pagina inizio
  • 369 (literal)
Pagina fine
  • 379 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 29 (literal)
Rivista
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • CNR, IMM, Catania, Italy; STMicroelect, Catania, Italy; CNR, IFN, Rome, Italy; Univ Oslo, Dept Phys, Oslo, Norway; Lambda Phys, Gottingen, Germany (literal)
Titolo
  • Perspectives and advantages of the use of excimer laser annealing for MOS technology (literal)
Abstract
  • The integration of excimer laser annealing (ELA) into the MOS device technology has been studied and evaluated within the frame of the IST project FLASH (Fundamentals and applications of laser processing for highly innovative MOS technology), funded by the European Commission. The final aim of the project was to demonstrate that ELA can be applied as a reliable, effective and advantageous process in the context of semiconductor device fabrication. Some of the results of this activity are summarised, relative to the experimental characterization and theoretical modelling. The electrical characterization of the transistor fabricated by ELA is also presented, showing a device yield of 90% on wafer. (literal)
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