Carrier concentration and mobility-profiling in quantum wells by scanning probe microscopy (Articolo in rivista)

Type
Label
  • Carrier concentration and mobility-profiling in quantum wells by scanning probe microscopy (Articolo in rivista) (literal)
Anno
  • 2007-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1016/j.mee.2006.10.065 (literal)
Alternative label
  • Giannazzo, F; Raineri, V; Mirabella, S; Impellizzeri, G; Priolo, F (2007)
    Carrier concentration and mobility-profiling in quantum wells by scanning probe microscopy
    in Microelectronic engineering; ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS, AMSTERDAM (Paesi Bassi)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Giannazzo, F; Raineri, V; Mirabella, S; Impellizzeri, G; Priolo, F (literal)
Pagina inizio
  • 446 (literal)
Pagina fine
  • 449 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 84 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali
  • 4 (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • CNR-IMM, I-95121 Catania, Italy; Univ Catania, MATIS, CNR, INFM, I-95123 Catania, Italy; Univ Catania, Dipartimento Fis & Astron, I-95123 Catania, Italy (literal)
Titolo
  • Carrier concentration and mobility-profiling in quantum wells by scanning probe microscopy (literal)
Abstract
  • Charge transport at nanoscale in ultra-scaled semiconductor structures and specifically designed nano-standards is investigated by different scanning probe microscopy (SPM) methods, i.e. scanning capacitance microscopy (SCM) and scanning spreading resistance microscopy (SSRM). A set of dedicated samples, containing B doped Si/Si0.75Ge0.25/Si quantum wells (QWs) with different thickness ranging from 20 to 1 nm and with B doping ranging from 1 x 10(18) cm(-3) to 5 x 10(18) cm(-3) were grown by molecular beam epitaxy. We demonstrated that the combined application of SCM and SSRM, commonly used to measure the local carrier concentration and the resistivity, respectively, allows to determine other physical properties, like the drift mobility in the nanometer thick QWs. Interesting effects were directly observed at nanoscale, like the relevant decrease in hole mobility with the shrinkage of QWs width from 20 to 1 nm, which was explained by the increasing role of surface scattering at the Si/SiGe interface for thinner QWs. (literal)
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