Organic light-emitting transistors using concentric source/drain electrodes on a molecular adhesion layer (Articolo in rivista)

Type
Label
  • Organic light-emitting transistors using concentric source/drain electrodes on a molecular adhesion layer (Articolo in rivista) (literal)
Anno
  • 2006-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1063/1.2193468 (literal)
Alternative label
  • Santato, C; Cicoira, F; Cosseddu, P; Bonfiglio, A; Bellutti, P; Muccini, M; Zamboni, R; Rosei, F; Mantoux, A; Doppelt, P C.Santato, F.Cicoira, P. Cosseddu, A.Bonfiglio, P. Belletti, M.Muccini, R.Zamboni, F. Rosei, A. Mantoux, P. Doppelt (2006)
    Organic light-emitting transistors using concentric source/drain electrodes on a molecular adhesion layer
    in Applied physics letters
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Santato, C; Cicoira, F; Cosseddu, P; Bonfiglio, A; Bellutti, P; Muccini, M; Zamboni, R; Rosei, F; Mantoux, A; Doppelt, P C.Santato, F.Cicoira, P. Cosseddu, A.Bonfiglio, P. Belletti, M.Muccini, R.Zamboni, F. Rosei, A. Mantoux, P. Doppelt (literal)
Pagina inizio
  • 163511 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 88 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo
  • 15 (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • 1. CNR, ISMN, I-40129 Bologna, Italy 2. Univ Quebec, INRS, EMT, Varennes, PQ J3X 1S2, Canada 3. Univ Cagliari, DIEE, I-09124 Cagliari, Italy 4. INFM S3, Modena, Italy 5. IRST, ITC, Microsyst Div, I-38050 Povo, Trento, Italy 6. Ctr Etud Chim Met, CNRS, F-94407 Vitry Sur Seine, France (literal)
Titolo
  • Organic light-emitting transistors using concentric source/drain electrodes on a molecular adhesion layer (literal)
Abstract
  • Bottom-contact tetracene light-emitting transistors employing a mercaptosilane derivative self-assembled monolayer as adhesive between gold concentric interdigitated source/drain electrodes and SiO2 gate dielectric are described. Devices that employ the mercaptosilane adhesive have a higher mobility and electroluminescence compared to those employing a standard metallic adhesive. This is rationalized in terms of the large, well interconnected grains found in tetracene films deposited on substrates using the mercaptosilane adhesive. Our work represents a step forward in the understanding of physical processes at semiconductor/metal and semiconductor/dielectric interfaces in organic devices. (c) 2006 American Institute of Physics. (literal)
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