http://www.cnr.it/ontology/cnr/individuo/prodotto/ID167470
UV photoimprinting of channel waveguides on active SiO2-GeO2 sputtered thin films (Articolo in rivista)
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- UV photoimprinting of channel waveguides on active SiO2-GeO2 sputtered thin films (Articolo in rivista) (literal)
- Anno
- 2006-01-01T00:00:00+01:00 (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
- 10.1063/1.2355472 (literal)
- Alternative label
G. Nunzi Conti; S.Berneschi; M. Brenci; S. Pelli; S. Sebastiani; G.C. Righini; C. Tosello; A. Chiasera; M. Ferrari. (2006)
UV photoimprinting of channel waveguides on active SiO2-GeO2 sputtered thin films
in Applied physics letters; American Institute Of Physics (AIP), Melville (Stati Uniti d'America)
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- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
- G. Nunzi Conti; S.Berneschi; M. Brenci; S. Pelli; S. Sebastiani; G.C. Righini; C. Tosello; A. Chiasera; M. Ferrari. (literal)
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- http://apl.aip.org/resource/1/applab/v89/i12/p121102_s1 (literal)
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- MDF Laboratory, \"Nello Carrara\" Institute of Applied Physics (IFAC), CNR, Via Madonna del Piano 10, I-50019 Sesto Fiorentino (FI), Italy;
Physics Department, University of Trento, CSMFO Group, Via Sommarive 14, I-38050 Povo (Trento), Italy;
Institute of Photonics and Nanotechnologies (IFN), Trento Section, CNR, CSMFO Group, Via Sommarive 14, I-38050 Povo (Trento), Italy. (literal)
- Titolo
- UV photoimprinting of channel waveguides on active SiO2-GeO2 sputtered thin films (literal)
- Abstract
- We report on direct UV photoimprinting of channel waveguides on sputtered 75SiO225GeO2 mol % thin films doped with erbium and ytterbium. The films, after annealing, constitute good-quality slab waveguides, single mode at 1550 nm. UV exposure through an amplitude mask defines channel waveguides. We show that the index change distribution in the channel can be simply related to the UV induced densification profile. Propagation losses are less than 0.3 dB/cm at 1300 nm for both planar and channel waveguides. The fabrication procedure is simpler and cheaper than conventional technologies, so it represents a convenient way for the fabrication of low
loss active optical integrated circuits. (literal)
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