Vacancy generation in liquid phase epitaxy of Si (Articolo in rivista)

Type
Label
  • Vacancy generation in liquid phase epitaxy of Si (Articolo in rivista) (literal)
Anno
  • 2007-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1103/PhysRevB.75.235201 (literal)
Alternative label
  • La Magna A, Privitera V, Fortunato G, Cuscuna M, Svensson BG, Monakhov E, Kuitunen K, Slotte J, Tuomisto F (2007)
    Vacancy generation in liquid phase epitaxy of Si
    in Physical review. B, Condensed matter and materials physics (Online); American Physical Society (APS), College Pk (Stati Uniti d'America)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • La Magna A, Privitera V, Fortunato G, Cuscuna M, Svensson BG, Monakhov E, Kuitunen K, Slotte J, Tuomisto F (literal)
Pagina inizio
  • 235201 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 75 (literal)
Rivista
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • CNR-IMM, Sez Catania, I-95121 Catania, Italy; CNR-IFN, I-00156 Rome, Italy; Univ Oslo, Dept Phys, N-0316 Oslo, Norway; Helsinki Univ Technol, Phys Lab, FI-02015 Espoo, Finland (literal)
Titolo
  • Vacancy generation in liquid phase epitaxy of Si (literal)
Abstract
  • Concerted experiments and theoretical analysis are applied to conclusively demonstrate the vacancy generation during fast melting and regrowth of Si by laser irradiation. Experiments, based on the positron annihilation spectroscopy and designed to test the theoretical predictions, evidence a vacancy supersaturation after the laser process depending on the irradiation conditions. Stochastic atomistic simulations of the molten Si recrystallization show trapping of vacancies in the recrystallized region. Finally, continuum phase-field simulations of the full process, calibrated using the Monte Carlo results, show a defect evolution in close agreement with the experiments. (literal)
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