Determination of the valence band offset of MOVPE-grown In0.48Ga0.52P/GaAs multiple quantum wells by admittance spectroscopy (Articolo in rivista)

Type

• Prodotto della ricerca (Classe)
• Articolo in rivista (Classe)

Label

• Determination of the valence band offset of MOVPE-grown In0.48Ga0.52P/GaAs multiple quantum wells by admittance spectroscopy (Articolo in rivista) (literal)

Anno

• 2008-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1103/PhysRevB.77.125317 (literal)

Alternative label

• Ghezzi C.(a); Magnanini R.(a); Parisini A.(a); Tarricone L.(a); Gombia E.(b); Longo M.(c) (2008)
  Determination of the valence band offset of MOVPE-grown In0.48Ga0.52P/GaAs multiple quantum wells by admittance spectroscopy
  in Physical review. B, Condensed matter and materials physics (Online)
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Ghezzi C.(a); Magnanini R.(a); Parisini A.(a); Tarricone L.(a); Gombia E.(b); Longo M.(c) (literal)

Pagina inizio

• 125317-1 (literal)

Pagina fine

• 125317-9 (literal)

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• http://prb.aps.org/abstract/PRB/v77/i12/e125317 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 77 (literal)

Rivista

• Physical review. B, Condensed matter and materials physics (Rivista)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#note

• In: Physical Review B, vol. 77 article n. 125317. The American Physical Society, 2008. (literal)

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• 9 (literal)

Note

• ISI Web of Science (WOS) (literal)
• Scopu (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• (a)Ghezzi, Carlo; (a)Magnanini, Renato; (a)Parisini, Antonella; (a)Tarricone, Luciano Univ Parma, CNISM, Dipartimento Fisica, Università di Parma, I-43100 Parma, Italy; (b)Gombia, Enos, CNR IMEM, I-43010 Parma, Italy; (c)Longo, Massimo, CNR-INFM, Dipartimento di Fisica, Università di Parma, Viale Giampaolo Usberti, 7/A, 43100 Parma, Italy (literal)

Titolo

• Determination of the valence band offset of MOVPE-grown In0.48Ga0.52P/GaAs multiple quantum wells by admittance spectroscopy (literal)

Abstract

• The valence band discontinuity of the lattice matched In0.48Ga0.52P/GaAs heterostructure was determined through a careful analysis of the temperature and frequency dependence of the admittance of p(+)/MQW/n(+) structures, formed by a nominally undoped InGaP/GaAs multiple quantum well region, interposed between p(+) and n(+) GaAs layers. The heterostructures were grown through metal organic vapor phase epitaxy by using tertiary butyl arsine and tertiary butyl phosphine as alternative precursors for the V-group elements. The growth conditions were optimized for obtaining sharp interfaces and negligible ordering effects in the cation sublattice. Accounting for the temperature dependence of the Fermi energy and the calculated confining energy (10 meV) of the heavy holes in the wells, a valence band offset Delta E-V= (356 +/- 5) meV was derived from the temperature variation of the resonance frequency at which the isothermal conductance over frequency G(omega)/omega curves show a maximum. The experimental uncertainty of this result is significantly low if compared with the wide range (240-400 meV) of the previously reported Delta E-V values. By considering the band gap difference between InGaP and GaAs, a conduction band offset Delta E-C=119 meV was estimated. The accuracy of the experimental procedure and the reliability of the main assumptions of the admittance spectroscopy measurements were accurately checked. The obtained results were discussed in light of the large and growing amount of literature data by taking into account the influence of the growth conditions on the physical properties of the InGaP/GaAs quantum wells. (literal)

Prodotto di

• Sviluppo, caratterizzazione strutturale e modelling di strutture avanzate per elettronica (MD.P05.002.001) (Modulo)
• Istituto dei materiali per l'elettronica ed il magnetismo (IMEM) (Istituto)
• Materiali, processi, e tecniche analitiche per la realizzazione di dispositivi innovativi con funzionalità logiche o di memoria non volatile integrabili su Silicio (MD.P05.007.001) (Modulo)

Autore CNR

• ENOS GOMBIA (Persona)
• MASSIMO LONGO (Unità di personale interno)

Insieme di parole chiave

• Keywords of "Determination of the valence band offset of MOVPE-grown In0.48Ga0.52P/GaAs multiple quantum wells by admittance spectroscopy" (Insieme di parole chiave)

Incoming links:

Autore CNR di

• MASSIMO LONGO (Unità di personale interno)
• ENOS GOMBIA (Persona)

Prodotto

• Istituto dei materiali per l'elettronica ed il magnetismo (IMEM) (Istituto)
• Sviluppo, caratterizzazione strutturale e modelling di strutture avanzate per elettronica (MD.P05.002.001) (Modulo)
• Materiali, processi, e tecniche analitiche per la realizzazione di dispositivi innovativi con funzionalità logiche o di memoria non volatile integrabili su Silicio (MD.P05.007.001) (Modulo)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Physical review. B, Condensed matter and materials physics (Rivista)

Insieme di parole chiave di

• Keywords of "Determination of the valence band offset of MOVPE-grown In0.48Ga0.52P/GaAs multiple quantum wells by admittance spectroscopy" (Insieme di parole chiave)