He implantation in Si for B diffusion control (Articolo in rivista)

Type
Label
  • He implantation in Si for B diffusion control (Articolo in rivista) (literal)
Anno
  • 2007-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1016/j.nimb.2007.01.034 (literal)
Alternative label
  • Bruno, E. (1); Mirabella, S. (1); Napolitani, E. (2); Giannazzo, F. (3); Raineri, V. (3); Priolo, F. (1) (2007)
    He implantation in Si for B diffusion control
    in Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms (Print); ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS, AMSTERDAM (Paesi Bassi)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Bruno, E. (1); Mirabella, S. (1); Napolitani, E. (2); Giannazzo, F. (3); Raineri, V. (3); Priolo, F. (1) (literal)
Pagina inizio
  • 181 (literal)
Pagina fine
  • 185 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 257 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali
  • 5 (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • (1) MATIS - CNR-INFM and Dipartimento di Fisica e Astronomia, Universita` di Catania, Via S. Sofia 64, I-95123 Catania, Italy (2) MATIS - CNR-INFM and Dipartimento di Fisica, Universita` di Padova, Via Marzolo 8, I-35131 Padova, Italy (3) IMM-CNR, Sezione di Catania, Stradale Primosole 50, I-95121 Catania, Italy (literal)
Titolo
  • He implantation in Si for B diffusion control (literal)
Abstract
  • A definitive method to prevent undesired phenomena related to B implantation in crystalline Si is still lacking. In fact, B undergoes enhanced diffusion, clustering and electrical deactivation as a consequence of interaction with implantation related damage. In this work we investigated the effect of He and B co-implantation in Si on point-defect population. We implanted Si wafers with B 12 keV, 5 x 10(14) ion s/cm(2) and/or He 25-80 keV, 0.5-3 x 10(16) ions/cm(2). By means of B diffusion and Cu gettering experiments, we studied the effectiveness of He induced nanovoids on controlling self-interstitials generated by implantation. We demonstrated that nanovoids strongly affect B diffusion, producing a B box-like shape, and that their efficiency increases with increasing He fluence. Moreover, this beneficial effect is still present increasing the annealing temperature from 700 to 1000 degrees C, leading to a reduction of B clustering, while maintaining a strong confinement of the implanted B profile. (literal)
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