Preparation and transport properties of hybrid organic-inorganic CH3NH3SnBr3 films (Articolo in rivista)

Type
Label
  • Preparation and transport properties of hybrid organic-inorganic CH3NH3SnBr3 films (Articolo in rivista) (literal)
Anno
  • 2007-01-01T00:00:00+01:00 (literal)
Alternative label
  • Chiarella, F; Ferro, P; Licci, F; Barra, M; Biasiucci, M; Cassinese, A; Vaglio, R (2007)
    Preparation and transport properties of hybrid organic-inorganic CH3NH3SnBr3 films
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Chiarella, F; Ferro, P; Licci, F; Barra, M; Biasiucci, M; Cassinese, A; Vaglio, R (literal)
Pagina inizio
  • 89 (literal)
Pagina fine
  • 93 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 86 (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • IMEM CNR, Area Sci 37A, I-43010 Parma, Italy; CNR INFM Coherentia, I-80125 Naples, Italy; Univ Naples Federico II, Dipartimento Sci Fisiche, I-80125 Naples, Italy (literal)
Titolo
  • Preparation and transport properties of hybrid organic-inorganic CH3NH3SnBr3 films (literal)
Abstract
  • We describe the preparation, structural and transport properties of CH3NH3SnBr3 organic-inorganic hybrid films (500 nm thick), which crystallize as cubic perovskites. They were deposited by single source thermal ablation technique, in a 10(-6) mbar vacuum chamber on glass, polymeric and crystalline substrates. X-ray diffraction proved that they were well crystallized and c-axis oriented. Resistivity measurements as a function of temperature showed a semiconductor behaviour. The activation energy, Delta E, was estimated by fitting the linear portions of the resistivity vs. temperature plots and was found to be (0.30 +/- 0.01) eV in the 260-230 K temperature interval. A significant change in resistivity was observed at a low temperature T=225 K in coincidence with the structural distortion in the Sn-Br-Sn chains. A field effect device was used to determine the charge carrier type and mobility as a function of temperature and field. The charge carriers were hole type. Their mobility at room temperature was about 10(-5) cm(2)V(-) s(-1). It increased by two orders of magnitude at 320 K and exhibited an almost exponential dependence on the applied gate voltage. (literal)
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