Parametric oscillation threshold of semiconductor microcavities in the strong coupling regime (Articolo in rivista)

Type
Label
  • Parametric oscillation threshold of semiconductor microcavities in the strong coupling regime (Articolo in rivista) (literal)
Anno
  • 2007-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1103/PhysRevB.75.075332 (literal)
Alternative label
  • Wouters M.; Carusotto I. (2007)
    Parametric oscillation threshold of semiconductor microcavities in the strong coupling regime
    in Physical review. B, Condensed matter and materials physics
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Wouters M.; Carusotto I. (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 75 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali
  • 12 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo
  • 7 (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • INFM, BEC, I-38050 Trento, Italy; Univ Trent, Dipartimento Fis, I-38050 Trento, Italy; Univ Antwerp VIB, TFVS, B-2610 Antwerp, Belgium (literal)
Titolo
  • Parametric oscillation threshold of semiconductor microcavities in the strong coupling regime (literal)
Abstract
  • The threshold of triply resonant optical parametric oscillation in a semiconductor microcavity in the strong coupling regime is investigated. Because of the third-order nature of the excitonic nonlinearity, a variety of different behaviors is observed thanks to the interplay of parametric oscillation and optical bistability effects. The behavior of the signal amplitude and of the quantum fluctuations in approaching the threshold has been characterized as a function of the pump, signal, and idler frequencies. (literal)
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