http://www.cnr.it/ontology/cnr/individuo/prodotto/ID1597
Structural features and electronic properties of group-III-, group-IV-, and group-V-doped Si nanocrystallites (Articolo in rivista)
- Type
- Label
- Structural features and electronic properties of group-III-, group-IV-, and group-V-doped Si nanocrystallites (Articolo in rivista) (literal)
- Anno
- 2007-01-01T00:00:00+01:00 (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
- 10.1088/0953-8984/19/46/466211 (literal)
- Alternative label
Ramos L.E.; Degoli E.; Cantele G.; Ossicini S.; Ninno D.; Furthmuller J.; Bechstedt F. (2007)
Structural features and electronic properties of group-III-, group-IV-, and group-V-doped Si nanocrystallites
in Journal of physics. Condensed matter (Print)
(literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
- Ramos L.E.; Degoli E.; Cantele G.; Ossicini S.; Ninno D.; Furthmuller J.; Bechstedt F. (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#url
- http://iopscience.iop.org/0953-8984/19/46/466211/ (literal)
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- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo
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- ISI Web of Science (WOS) (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
- Univ Jena, Inst Festkorpertheorie & Opt, D-07743 Jena, Germany; ETSF, D-07743 Jena, Germany; Univ Modena & Reggio Emilia, CNR, INFM S3, I-42100 Reggio Emilia, Italy; Univ Modena & Reggio Emilia, Dipartimento Sci & Metodi Ingn, I-42100 Reggio Emilia, Italy; Univ Naples Federico 2, Dipartimento Sci Fisiche, I-80126 Naples, Italy; INFM, Coherentia CNR, I-80126 Naples, Italy (literal)
- Titolo
- Structural features and electronic properties of group-III-, group-IV-, and group-V-doped Si nanocrystallites (literal)
- Abstract
- We investigate the incorporation of group-III ( B and Al), group-IV ( C and Ge), and group-V ( N and P) impurities in Si nanocrystallites. The structural features and electronic properties of doped Si nanocrystallites, which are faceted or spherical-like, are studied by means of an ab initio pseudopotential method including spin polarization. Jahn-Teller distortions occur in the neighborhood of the impurity sites and the bond lengths show a dependence on size and shape of the nanocrystallites. We find that the acceptor ( group-III) and donor ( group-V) levels become deep as the nanocrystallites become small. The energy difference between the spin-up and spin-down levels of group-III and group-V impurities decreases as the size of the Si nanocrystallite increases and tends to the value calculated for Si bulk. Doping with carbon introduces an impurity-related level in the energy gap of the Si nanocrystallites. (literal)
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