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Strain relaxation mechanism in a reverse compositionally graded SiGe heterostructure (Articolo in rivista)

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Strain relaxation mechanism in a reverse compositionally graded SiGe heterostructure (Articolo in rivista) (literal)

Anno

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Wong, LH; Liu, JP; Romanato, F; Wong, CC; Foo, YL (2007)
Strain relaxation mechanism in a reverse compositionally graded SiGe heterostructure
in Applied physics letters
(literal)

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Nanyang Technol Univ, Sch Mat Sci & Engn, Singapore 639798, Singapore; Chartered Semicond Mfg Ltd, Technol & Dev, Singapore 738406, Singapore; Nanyang Technol Univ, Sch Mat Sci & Engn, Singapore 63979, Singapore; Inst Mat Res & Engn, Singapore 117602, Singapore; CNR, INMFM, TASC, I-34016 Trieste, Italy (literal)

Titolo

Strain relaxation mechanism in a reverse compositionally graded SiGe heterostructure (literal)

Abstract

A concept of compositional reverse-grading (RG) in SiGe/Si heteroepitaxy has been proposed, in which the graded layer lattice mismatch starts at the highest value at the RG/Si interface and decreases to a final mismatch at the SiGe/RG interface. Using various characterization techniques, the authors show that this low-dislocation-density strain relaxation mechanism relies on the large nucleation rates of misfit dislocations at the abrupt RG/Si interface and the reduction of threading dislocations at the SiGe/RG interface by facilitating glide. The RG concept enables the growth of high-quality relaxed epitaxial layer on a thin buffer layer, suitable as a substrate for many microelectronic and optoelectronic applications. (c) 2007 American Institute of Physics. (literal)

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