Semiconductor device with vertical current flow and low substrate resistance and manufacturing process thereof (Brevetto)

Type
Label
  • Semiconductor device with vertical current flow and low substrate resistance and manufacturing process thereof (Brevetto) (literal)
Anno
  • 2007-01-01T00:00:00+01:00 (literal)
Alternative label
  • Magri A, Marino A (2007)
    Semiconductor device with vertical current flow and low substrate resistance and manufacturing process thereof
    US2007272980 (A1)
    (literal)
Titolo
  • Semiconductor device with vertical current flow and low substrate resistance and manufacturing process thereof (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Magri A, Marino A (literal)
Numero brevetto
  • US2007272980 (A1) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#descrizioneSinteticaDelProdotto
  • A semiconductor device with vertical current flow includes a body having a substrate made of semiconductor material. At least one electrical contact on a first face of the body. A metallization structure is formed on a second face of the body, opposite to the first face. The metallization structure is provided with metal vias, which project from the second face within the substrate so as to form a high-conductivity path in parallel with portions of said substrate. (literal)
Anno di deposito
  • 2007 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • STMicroelectronics Catania, IMM-Catania (literal)
Titolo
  • Semiconductor device with vertical current flow and low substrate resistance and manufacturing process thereof (literal)
Prodotto di
Autore CNR

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Prodotto
Autore CNR di
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