Process for fabricating a semiconductor device having a suspended microsystem and resultant device (Brevetto)

Type
Label
  • Process for fabricating a semiconductor device having a suspended microsystem and resultant device (Brevetto) (literal)
Anno
  • 2005-01-01T00:00:00+01:00 (literal)
Alternative label
  • D'Arrigo G.; Spinella C. (2005)
    Process for fabricating a semiconductor device having a suspended microsystem and resultant device
    (literal)
Titolo
  • Process for fabricating a semiconductor device having a suspended microsystem and resultant device (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • D'Arrigo G.; Spinella C. (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#altreInformazioni
  • Il presente brevetto è stato ceduto all'ST Microelectronics a fronte del contratto annuale con ST microelectronics (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#proprieta
  • STMicroelectronics S.R.L. (literal)
Http://www.cnr.it/ontology/cnr/brevetti.owl#tipoDiBrevetto
  • Internazionale (literal)
Numero brevetto
  • US7,195,946 B2 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#descrizioneSinteticaDelProdotto
  • A method is provided for fabricating a semiconductor device that includes a suspended micro-system. According to the method, a silicon porous layer is formed above a silicon substrate, and the silicon porous layer is oxidized. An oxide layer is deposited, and a first polysilicon layer is deposited above the oxide layer. The first polysilicon layer, the oxide layer, and the silicon porous layer are selectively removed. A nitride layer is deposited, and a second polysilicon layer is deposited. The second polysilicon layer, the nitride layer, the first polysilicon layer, and the oxide layer are selectively removed. The silicon porous layer is removed in areas made accessible by the previous step. Also provided is a semiconductor device that includes a suspended structure fixed to at least two walls through a plurality of hinges, with the suspended structure including an oxide layer, a first polysilicon layer, a nitride layer, and a second polysilicon layer. (literal)
Anno di deposito
  • 2005 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • IMM-CNR Catania (literal)
Titolo
  • Process for fabricating a semiconductor device having a suspended microsystem and resultant device (literal)
Http://www.cnr.it/ontology/cnr/brevetti.owl#annoDiConcessione
  • 2007 (literal)
Abstract
  • A method is provided for fabricating a semiconductor device that includes a suspended micro-system. According to the method, a silicon porous layer is formed above a silicon substrate, and the silicon porous layer is oxidized. An oxide layer is deposited, and a first polysilicon layer is deposited above the oxide layer. The first polysilicon layer, the oxide layer, and the silicon porous layer are selectively removed. A nitride layer is deposited, and a second polysilicon layer is deposited. The second polysilicon layer, the nitride layer, the first polysilicon layer, and the oxide layer are selectively removed. The silicon porous layer is removed in areas made accessible by the previous step. Also provided is a semiconductor device that includes a suspended structure fixed to at least two walls through a plurality of hinges, with the suspended structure including an oxide layer, a first polysilicon layer, a nitride layer, and a second polysilicon layer. (literal)
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