Atomistic modeling of brittleness in covalent materials (Articolo in rivista)

Type
Label
  • Atomistic modeling of brittleness in covalent materials (Articolo in rivista) (literal)
Anno
  • 2007-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1103/PhysRevB.76.224103 (literal)
Alternative label
  • Mattoni, A; Ippolito, M; Colombo, L (2007)
    Atomistic modeling of brittleness in covalent materials
    in Physical review. B, Condensed matter and materials physics
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Mattoni, A; Ippolito, M; Colombo, L (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#url
  • http://prb.aps.org/abstract/PRB/v76/i22/e224103 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 76 (literal)
Rivista
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • Univ Cagliari, SLACS INFM, CNR, Sardinian Lab Comp Mat Sci, I-09124 Cagliari, Italy; Univ Cagliari, Dipartimento Fis, I-09124 Cagliari, Italy (literal)
Titolo
  • Atomistic modeling of brittleness in covalent materials (literal)
Abstract
  • Despite a large number of model potentials having been developed in the last decades for silicon and group-IV elements, only a few of them correctly reproduce the brittle propagation of fracture and provide a proper estimate of the failure strength for such materials. We prove that the inability to model the brittle crack opening shown by most model potentials is related to their short-range character, a feature which overestimates the atomic force necessary to snap a bond. By using the universal energy relation we prove that any model potential aimed at studying fracture in covalent crystals should include interactions longer than the second-neighbor distance. We adopt the Tersoff force model to illustrate such a concept in the case of Si-Ge-C systems. Finally, we demonstrate that by means of a suitable modification of the Tersoff force model it is possible to recover the brittle fracture in Si, C, Ge, and SiC and to provide a quantitative prediction of many mechanical properties. (literal)
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