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Effect of the Er-Si interatomic distance on the Er3+ luminescence in silicon-rich silicon oxide thin films (Articolo in rivista)

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Effect of the Er-Si interatomic distance on the Er3+ luminescence in silicon-rich silicon oxide thin films (Articolo in rivista) (literal)

Anno

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Noe, P; Salem, B; Delamadeleine, E; Jalabert, D; Calvo, V; Maurizio, C; D'Acapito, F (2007)
Effect of the Er-Si interatomic distance on the Er3+ luminescence in silicon-rich silicon oxide thin films
in Journal of applied physics
(literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

Noe, P; Salem, B; Delamadeleine, E; Jalabert, D; Calvo, V; Maurizio, C; D'Acapito, F (literal)

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Lab Silicium Nanoelect Photonique & Struct, DRFM SP2M, Comm Energie Atom, F-38054 Grenoble, France; CNR, INFM, OGG, F-38043 Grenoble, France (literal)

Titolo

Effect of the Er-Si interatomic distance on the Er3+ luminescence in silicon-rich silicon oxide thin films (literal)

Abstract

The photoluminescence (PL) intensity of Er-doped silicon monoxide thin films obtained by coevaporation of silicon monoxide and Er is studied for different deposition and annealing atmosphere compositions. All samples exhibit a luminescence peak at 1.54 mu m assigned to the radiative deexcitation of Er3+. PL intensity is highest when nitrogen atoms are incorporated in the layer during deposition. Extended x-ray absorption fine structure spectroscopy evidences that the local order around the erbium ion is modified in the presence of nitrogen. In particular, the shorter the Er-Si interatomic distance is, the higher the Er3+ PL intensity is. (literal)

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