Carrier transport in advanced semiconductor materials (Contributo in volume (capitolo o saggio))

Type

• Prodotto della ricerca (Classe)
• Contributo in volume (capitolo o saggio) (Classe)

Label

• Carrier transport in advanced semiconductor materials (Contributo in volume (capitolo o saggio)) (literal)

Anno

• 2008-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1007/978-3-540-74085-8_2 (literal)

Alternative label

• Filippo Giannazzo, Patrick Fiorenza, Vito Raineri (2008)
  Carrier transport in advanced semiconductor materials
  Springer-Verlag, Berlin (Germania) in Applied Scanning Probe Methods X, 2008
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Filippo Giannazzo, Patrick Fiorenza, Vito Raineri (literal)

Pagina inizio

• 63 (literal)

Pagina fine

• 103 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#altreInformazioni

• ISBN: 978-3-540-74084-1 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#citta

• Heidelberg (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#titoloVolume

• Applied Scanning Probe Methods X (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#volumeInCollana

• 10 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• CNR-IMM, Catania, Italy (literal)

Titolo

• Carrier transport in advanced semiconductor materials (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#inCollana

• Applied Scanning Probe Methods, Vol. 10 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#isbn

• 978-3-540-74084-1 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autoriVolume

• B. Bhushan, H. Fuchs and M. Tomitori (literal)

Abstract

• In this chapter, the main scanning probe microscopy based methods to measure transport properties in advanced semiconductor materials are presented. The two major approaches to determine the majority carrier distribution, i. e., scanning capacitance microscopy (SCM) and scanning spreading resistance microscopy (SSRM), are illustrated, starting from their basic principles. The imaging capabilities for critical structures and the quantification of SCM and SSRM raw data to carrier concentration profiles are described and discussed. The determination of drift mobility in semiconductors by combined application of SCM and SSRM is illustrated considering quantum wells. The carrier transport through metal-semiconductor barriers by conductive atomic forcemicroscopy (CAFM) is reviewed. Finally, the charge transport in dielectrics is studied locally by CAFM, and a method for the direct determination of dielectric breakdown and Weibull statistics is illustrated. (literal)

Editore

• Springer-Verlag (Editore)

Prodotto di

• Institute for microelectronics and microsystems (IMM) (Istituto)
• Materiali multifunzionali, e innovativi per componenti integrati (MD.P05.003.002) (Modulo)
• Nanotecnologie e tecnologie avanzate per elettronica integrata (MD.P05.003.004) (Modulo)

Autore CNR

• PATRICK FIORENZA (Persona)
• VITO RAINERI (Persona)
• FILIPPO GIANNAZZO (Persona)

Insieme di parole chiave

• Keywords of "Carrier transport in advanced semiconductor materials" (Insieme di parole chiave)

Incoming links:

Autore CNR di

• VITO RAINERI (Persona)
• FILIPPO GIANNAZZO (Persona)
• PATRICK FIORENZA (Persona)

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)
• Nanotecnologie e tecnologie avanzate per elettronica integrata (MD.P05.003.004) (Modulo)
• Materiali multifunzionali, e innovativi per componenti integrati (MD.P05.003.002) (Modulo)

Editore di

• Springer-Verlag (Editore)

Insieme di parole chiave di

• Keywords of "Carrier transport in advanced semiconductor materials" (Insieme di parole chiave)