Structural Instability of Annealed a-Si/a-Ge Nanostructures (Contributo in atti di convegno)

Type
Label
  • Structural Instability of Annealed a-Si/a-Ge Nanostructures (Contributo in atti di convegno) (literal)
Anno
  • 2009-01-01T00:00:00+01:00 (literal)
Alternative label
  • Frigeri C.; Nasi L.; Serényi M.; Csik A.; Erdely Z.; Beke D. L. (2009)
    Structural Instability of Annealed a-Si/a-Ge Nanostructures
    in Nanomeeting-2009, Minsk (BY), 26-29 may 2009
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Frigeri C.; Nasi L.; Serényi M.; Csik A.; Erdely Z.; Beke D. L. (literal)
Pagina inizio
  • 85 (literal)
Pagina fine
  • 88 (literal)
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  • Singapore (literal)
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  • Physics, Chemistry and Application of Nanostructures (literal)
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  • In: Physics, Chemistry and Application of Nanostructures. pp. 85 - 88. V. E. Borisenko, S. V. Gaponenko and V. S. Gurin (eds.). Singapore: World Scientific Publishing, 2009. (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#descrizioneSinteticaDelProdotto
  • It is shown that heat treatments cause remarkable structural instability in hydrogenated nanostructures made of alternating 3 nm thick layers of a-Si and a-Ge deposited by sputtering. Upon annealing surface bumps form whose size and density increase with increasing H content. They are due to the presence of H bubbles in the samples, which even blow up for the highest H content. The H bubbles form by accumulation of H2 molecules made possible by the break of the Si-H and Ge-H bonds driven by the energy supplied by the heat treatment and by the recombination of thermally generated carriers. (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • CNR-IMEM, Parma, MTA-MFA Institute, Budapest (H), Institute of Nuclear Research of HAS, Debrecen, Hungary, Department of Solid State Physics, University of Debrecen, Debrecen, Hungary (literal)
Titolo
  • Structural Instability of Annealed a-Si/a-Ge Nanostructures (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#inCollana
  • Physics, Chemistry and Application of Nanostructures (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#isbn
  • 978-981-4280-35-8 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#curatoriVolume
  • V. E. Borisenko, S. V. Gaponenko and V. S. Gurin (literal)
Abstract
  • It is shown that heat treatments cause remarkable structural instability in hydrogenated nanostructures made of alternating 3 nm thick layers of a-Si and a-Ge deposited by sputtering. Upon annealing surface bumps form whose size and density increase with increasing H content. They are due to the presence of H bubbles in the samples, which even blow up for the highest H content. The H bubbles form by accumulation of H2 molecules made possible by the break of the Si-H and Ge-H bonds driven by the energy supplied by the heat treatment and by the recombination of thermally generated carriers (literal)
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