EBIC as a tool for the study of gettering phenomena in Silicon (Contributo in volume (capitolo o saggio))

Type

• Prodotto della ricerca (Classe)
• Contributo in volume (capitolo o saggio) (Classe)

Label

• EBIC as a tool for the study of gettering phenomena in Silicon (Contributo in volume (capitolo o saggio)) (literal)

Anno

• 2008-01-01T00:00:00+01:00 (literal)

Alternative label

• Frigeri C. (2008)
  EBIC as a tool for the study of gettering phenomena in Silicon
  Research Signpost, Trivandrum (India) in , 2008
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Frigeri C. (literal)

Pagina inizio

• 153 (literal)

Pagina fine

• 167 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#citta

• Trivandrum-695 023, Kerala, In (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#note

• In: Beam Injection Based Nanocharacterization of Advanced Materials. pp. 153 - 167. G. Salviati, T. Sekiguchi, S. Heun, A. Gustafsson Eds (eds.). Trivandrum-695 023, Kerala, India: Research Signpost, 2008. (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#descrizioneSinteticaDelProdotto

• After a review of a recent model of interpretation of the EBIC contrast at extended defects and of the most used gettering procedures, the paper illustrates how EBIC can be used to study gettering phenomena in silicon. The potentiality of EBIC to get quantitative information on some gettering processes, like internal and p+ gettering as well as poly-Si gettering, is demonstrated. It is shown that by using EBIC it is possible to establish which is the contaminant and the range of its initial density in not-intentionally contaminated epi Si. This is achieved by comparing the features of internal gettering, as determined by EBIC, to those of p+ gettering. (literal)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• CNR-IMEM, Parma (literal)

Titolo

• EBIC as a tool for the study of gettering phenomena in Silicon (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#inCollana

• Beam Injection Based Nanocharacterization of Advanced Materials (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#isbn

• 978-81-308-0226-8 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#curatoriVolume

• G. Salviati, T. Sekiguchi, S. Heun, A. Gustafsson (literal)

Abstract

• After a review of a recent model of interpretation of the EBIC contrast at extended defects and of the most used gettering procedures, the paper illustrates how EBIC can be used to study gettering phenomena in silicon. The potentiality of EBIC to get quantitative information on some gettering processes, like internal and p+ gettering as well as poly-Si gettering, is demonstrated. It is shown that by using EBIC it is possible to establish which is the contaminant and the range of its initial density in not-intentionally contaminated epi Si. This is achieved by comparing the features of internal gettering, as determined by EBIC, to those of p+ gettering. (literal)

Editore

• Research Signpost (Editore)

Prodotto di

• Sviluppo, caratterizzazione strutturale e modelling di strutture avanzate per elettronica (MD.P05.002.001) (Modulo)
• Istituto dei materiali per l'elettronica ed il magnetismo (IMEM) (Istituto)

Autore CNR

• CESARE FRIGERI (Persona)

Insieme di parole chiave

• Keywords of "EBIC as a tool for the study of gettering phenomena in Silicon" (Insieme di parole chiave)

Incoming links:

Prodotto

• Istituto dei materiali per l'elettronica ed il magnetismo (IMEM) (Istituto)
• Sviluppo, caratterizzazione strutturale e modelling di strutture avanzate per elettronica (MD.P05.002.001) (Modulo)

Autore CNR di

• CESARE FRIGERI (Persona)

Editore di

• Research Signpost (Editore)

Insieme di parole chiave di

• Keywords of "EBIC as a tool for the study of gettering phenomena in Silicon" (Insieme di parole chiave)