The role of the ion implanted emitter state on 6H-SiC power diodes behavior. A statistical study. (Comunicazione a convegno)

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Label
  • The role of the ion implanted emitter state on 6H-SiC power diodes behavior. A statistical study. (Comunicazione a convegno) (literal)
Anno
  • 2003-01-01T00:00:00+01:00 (literal)
Alternative label
  • M. Lazar, Cardinali C.G., Raynaud C., Poggi A., Planson, Nipoti R., Chante J.P. (2003)
    The role of the ion implanted emitter state on 6H-SiC power diodes behavior. A statistical study.
    in 10th International conference on Silicon carbide and Related Materials, Lione
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • M. Lazar, Cardinali C.G., Raynaud C., Poggi A., Planson, Nipoti R., Chante J.P. (literal)
Titolo
  • The role of the ion implanted emitter state on 6H-SiC power diodes behavior. A statistical study. (literal)
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