Molecular Beam Epitaxy of InN, GaN, and AlN on SiC: Effect of Nitride/SiC Interface on Material properties (Abstract/Poster in atti di convegno)

Type
Label
  • Molecular Beam Epitaxy of InN, GaN, and AlN on SiC: Effect of Nitride/SiC Interface on Material properties (Abstract/Poster in atti di convegno) (literal)
Anno
  • 2006-01-01T00:00:00+01:00 (literal)
Alternative label
  • T.H. Kim, S. Choi, P. Wu, A. Brown, M. Losurdo, G. Bruno, (2006)
    Molecular Beam Epitaxy of InN, GaN, and AlN on SiC: Effect of Nitride/SiC Interface on Material properties
    in Int. Conf. On Blue lasers and Light emitting diodes-ISBLLED, Montpelier, France. May 15-19
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • T.H. Kim, S. Choi, P. Wu, A. Brown, M. Losurdo, G. Bruno, (literal)
Titolo
  • Molecular Beam Epitaxy of InN, GaN, and AlN on SiC: Effect of Nitride/SiC Interface on Material properties (literal)
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