CL and Dark Field TEM Analysis of Composition Change at Interfaces in InGaP/GaAs Junctions Grown by MOCVD (Abstract/Poster in atti di convegno)

Type
Label
  • CL and Dark Field TEM Analysis of Composition Change at Interfaces in InGaP/GaAs Junctions Grown by MOCVD (Abstract/Poster in atti di convegno) (literal)
Anno
  • 2010-01-01T00:00:00+01:00 (literal)
Alternative label
  • Frigeri C.; Shakhmin A. A.; Vinokurov D. A.; Zamoryanskaya M. V. (2010)
    CL and Dark Field TEM Analysis of Composition Change at Interfaces in InGaP/GaAs Junctions Grown by MOCVD
    in 10th International Workshop on Beam Injection Assessment of Microstructures in Semiconductor, Halle (D), July 04 - 08, 2010
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Frigeri C.; Shakhmin A. A.; Vinokurov D. A.; Zamoryanskaya M. V. (literal)
Pagina inizio
  • 09 (literal)
Pagina fine
  • 09 (literal)
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  • In: BIAMS 2010, 10th International Workshop on Beam Injection Assessment of Microstructures in Semiconductor (Halle (D), July 04 - 08 2010). Abstract, p. 09. MPI, Halle (D), 2010. (literal)
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  • Because of its superior properties with respect to AlGaAs, InGaP is a key material for several devices, like HBTs, HEMTs, solar cells and LEDs, which are currenly based on the InGaP/GaAs heterojunction. For MOVPE grown InGaP/GaAs it has been shown by PL, X-ray diffraction and TEM that it is difficult to grow abrupt interfaces between InGaP and GaAs because there is no common group V element across the interface. This especially affects the inverted GaAs-on-InGaP interface where an unwanted extra interlayer forms which recombines the minority carriers more efficiently than the GaAs quantum well. Here we report on a study of the composition change at interfaces in InGaP/GaAs heterojunctions grown on GaAs (100) substrate by low pressure MOCVD using \"Emcore GS3100\" installation by means of cathodoluminescence (CL) and dark field TEM. The growth temperature was 700°C. After the GaAs buffer the samples contained an InGaP layer nominally followed by a 10 nm thick GaAs layer capped with AlGaAs at the top. They were analysed by spectroscopic CL at the temperature of 300 K and 77 K in an electron-probe microanalyser Camebax supplied with the CL system. Cross section TEM observations in the dark field mode were carried out in a 2200 FS JEOL machine. Cathodoluminescence studies at various electronic beam energies allow receiving spectra of structures from various depths. In the CL spectra of the structure at 77K there are bands corresponding to AlGaAs layer at 1.89 eV, and InGaP layer at 1.94 eV. For this structure the only wide band of luminescence at 1.49eV corresponding to bulk GaAs was observed. In this connection we assume that instead of the 10 nm GaAs QW layer the quaternary layer of the mixed composition In0-0.15GaAsP0.02 was formed. By (002) dark field TEM it was observed that the nominal 10 nm thick GaAs layer on top of InGaP had contrast darker than the GaAs buffer layer which indicates that it is not made of GaAs. Theoretical calculation of the (002) dark field cont (literal)
Note
  • Abstract (literal)
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  • CNR-IMEM, Parma, Ioffe Physical Technical Institute, 194021 Saint-Petersburg (Russia) (literal)
Titolo
  • CL and Dark Field TEM Analysis of Composition Change at Interfaces in InGaP/GaAs Junctions Grown by MOCVD (literal)
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