Interface shape control and tellurium inclusion concentration distribution in CdZnTe crystals grown by vertical Bridgman for X-ray detector applications (Comunicazione a convegno)

Type

• Prodotto della ricerca (Classe)
• Comunicazione a convegno (Classe)

Label

• Interface shape control and tellurium inclusion concentration distribution in CdZnTe crystals grown by vertical Bridgman for X-ray detector applications (Comunicazione a convegno) (literal)

Anno

• 2010-01-01T00:00:00+01:00 (literal)

Alternative label

• Zappettini A.; Marchini L.; Zambelli N.; Zha M.; Auricchio N.; Caroli E. (2010)
  Interface shape control and tellurium inclusion concentration distribution in CdZnTe crystals grown by vertical Bridgman for X-ray detector applications
  in E-MRS 2010 Fall Meeting, Warsaw - Poland
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Zappettini A.; Marchini L.; Zambelli N.; Zha M.; Auricchio N.; Caroli E. (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#note

• In: E-MRS 2010 Fall Meeting (Warsaw - Poland, 13-17 September 2010). (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#descrizioneSinteticaDelProdotto

• In spite of the efforts devoted to the task, many problems connected with the growth of CdZnTe (Zn0) crystals are still unresolved, in particular tellurium inclusion density control, large single crystalline yield, seeding, and interface shape control. Moreover, also the electrical properties of the crystals (high resistivity and mobility-lifetime product) must be taken into account if detector performances have to be improved. In this work, the authors report on the growth and characterization of several CdZnTe crystals (Zn=10%) by vertical Bridgman, with and without the use of boron oxide as encapsulant. Different techniques were used to characterize the crystals: i) PL mapping for determining interface shape and to study the nucleation ii) a novel IR mapping apparatus to obtain fully 3D reconstruction of the inclusion distribution iii) X-ray detector characterization by means of nuclear sources to study the transport properties of the material (with mobility-lifetime product for electrons up to 6x10-3 cm2/V). (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• CNR-IMEM, Parma, INAF/IASF-BO, Via Gobetti 101, 40129 Bologna (literal)

Titolo

• Interface shape control and tellurium inclusion concentration distribution in CdZnTe crystals grown by vertical Bridgman for X-ray detector applications (literal)

Prodotto di

• Istituto dei materiali per l'elettronica ed il magnetismo (IMEM) (Istituto)
• Sensori di raggi X (SP.P02.003.002) (Modulo)

Autore CNR

• ANDREA ZAPPETTINI (Persona)
• Nicola Zambelli (Unità di personale esterno)
• Laura Marchini (Persona)
• MINGZHENG ZHA (Persona)

Insieme di parole chiave

• Parole chiave di "Interface shape control and tellurium inclusion concentration distribution in CdZnTe crystals grown by vertical Bridgman for X-ray detector applications" (Insieme di parole chiave)

Incoming links:

Prodotto

• Istituto dei materiali per l'elettronica ed il magnetismo (IMEM) (Istituto)
• Sensori di raggi X (SP.P02.003.002) (Modulo)

Autore CNR di

• MINGZHENG ZHA (Persona)
• ANDREA ZAPPETTINI (Persona)
• Laura Marchini (Persona)
• Nicola Zambelli (Unità di personale esterno)

Insieme di parole chiave di

• Parole chiave di "Interface shape control and tellurium inclusion concentration distribution in CdZnTe crystals grown by vertical Bridgman for X-ray detector applications" (Insieme di parole chiave)