Structural Instability of Annealed a-Si/a-Ge Nanostructures (Abstract/Poster in atti di convegno)

Type
Label
  • Structural Instability of Annealed a-Si/a-Ge Nanostructures (Abstract/Poster in atti di convegno) (literal)
Anno
  • 2009-01-01T00:00:00+01:00 (literal)
Alternative label
  • Frigeri C.; Nasi L.; Serenyi M.; Csik A.; Erdely Z.; Beke D. L. (2009)
    Structural Instability of Annealed a-Si/a-Ge Nanostructures
    in Nanomeeting-2009, Minsk (BY), 26-29 MAY 2009
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Frigeri C.; Nasi L.; Serenyi M.; Csik A.; Erdely Z.; Beke D. L. (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#note
  • In: Nanomeeting-2009 (Minsk (BY), 26-29 May 2009). Abstract, p. 2. Physics Department- State University of Minsk, 2009. (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#descrizioneSinteticaDelProdotto
  • It is shown that heat treatments cause remarkable structural instability in nanostructures made of alternating 3 nm thick hydrogenated layers of a-Si and a-Ge deposited by sputtering. Upon annealing surface bumps form whose size and density increase with increasing H content. They are due to the presence of H bubbles inside the samples, which even blow up for the highest H content. The H bubbles form by accumulation of H2 molecules made possible by the break of the Si-H and Ge-H bonds driven by the energy supplied by the heat treatment and by the recombination of thermally generated carriers. (literal)
Note
  • Poster (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • CNR-IMEM, Parma, MTA-MFA Institute, Budapest (H), Institute of Nuclear Research of HAS, Debrecen, Hungary, Department of Solid State Physics, University of Debrecen, Debrecen, Hungary (literal)
Titolo
  • Structural Instability of Annealed a-Si/a-Ge Nanostructures (literal)
Abstract
  • It is shown that heat treatments cause remarkable structural instability in hydrogenated nanostructures made of alternating 3 nm thick layers of a-Si and a-Ge deposited by sputtering. Upon annealing surface bumps are formed. Their size and density increase with increasing H content. They appear due to the presence of H bubbles in the samples, which even blow up for the highest H content. The H bubbles are produced by accumulation of H2 molecules made possible by the break of the Si-H and Ge-H bonds driven by energy supplied by the heat treatment and the recombination of thermally generated carriers. (literal)
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