Photocurrent Spectroscopy of Electron Levels in Semiconductor Quantum Wells (Abstract/Poster in convegno)

Type
Label
  • Photocurrent Spectroscopy of Electron Levels in Semiconductor Quantum Wells (Abstract/Poster in convegno) (literal)
Anno
  • 2009-01-01T00:00:00+01:00 (literal)
Alternative label
  • Ghezzi C.; Parisini A.; Tarricone L.; Gombia E.; Baldini M.; Vantaggio S. (2009)
    Photocurrent Spectroscopy of Electron Levels in Semiconductor Quantum Wells
    in 9th Nanotechnology Conference, Genoa
    (literal)
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  • Ghezzi C.; Parisini A.; Tarricone L.; Gombia E.; Baldini M.; Vantaggio S. (literal)
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  • In: IEEE NANO 2009 - 9th Nanotechnology Conference (Genoa, 26-30 July 2009). (literal)
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  • Photocurrent spectroscopy investigation of InGaP/ GaAs Multi-Quantum-Well (MQW), formed by an alternate sequence of nominally undoped 12 nm /8 nm thick InGaP/GaAs layers, is reported. The MQW, interposed between two p+ and n+ InGaP cladding layers, were grown lattice matched on n+-GaAs substrates through Metal Organic Vapour Phase Epitaxy by using tertiarybutyl-arsine and tertiarybutyl-phosphine as alternative precursors for the V group elements. The analysis of experimental data, taken in the temperature range 10-300 K, shows a low structural disorder and a good reliability of the grown structures, which prove an optimum control of the desired design of the grown MQWs and the powerful features of the photocurrent spectroscopy technique. (literal)
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  • Department of Physics, University of Parma, Parma, Italy, CNR-IMEM, Parma (literal)
Titolo
  • Photocurrent Spectroscopy of Electron Levels in Semiconductor Quantum Wells (literal)
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