http://www.cnr.it/ontology/cnr/individuo/prodotto/ID114131
Atomic and electronic structure of the non-polar GaN(1-100) surface (Comunicazione a convegno)
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- Label
- Atomic and electronic structure of the non-polar GaN(1-100) surface (Comunicazione a convegno) (literal)
- Anno
- 2008-01-01T00:00:00+01:00 (literal)
- Alternative label
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
- Bertelli M.; Loeptien P.; Malindretos J.; Wenderoth M.; Ulbrich R.; Rizzi A.; Righi M.; Catellani A. (literal)
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- In: DPG - Berlin 2008: Surface Science Division (DPG) (Berlin (DE), 25 - 29 Febbraio 2008). (literal)
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- Cross-section scanning tunneling microscopy (STM) and scanning tunnelling spectroscopy (STS) have been performed on the non-polar GaN(1100) surface (m-plane). The unintentionally n-doped GaN(0001) samples were thinned down to ~100 µm , cleaved along the m-plane in ultra high vacuum and measured in-situ by STM at room temperature. The experimental empty state topographies collected with sample bias from +2.9 V to +4.0 V show an unreconstructed surface. First principle DFT-LDA calculations of the surface electronic properties were performed. In agreement with experiment, the calculations predict a relaxed surface but no reconstruction. Two surface bands appear inside the semiconductor band gap at the borders of the surface Brillouin zone, one empty band localized on the Ga-atoms and one filled band on the N-atoms. Up to now this theoretical prediction has not been confirmed by the STS experiment. (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
- Physikalisches Institut and Virtual Institute of Spin Electronics (VISel), CNR-INFM, Modena - S3 and University of Modena - Reggio Emilia, CNR-INFM, Modena- S3 and CNR-IMEM, Parma (literal)
- Titolo
- Atomic and electronic structure of the non-polar GaN(1-100) surface (literal)
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