Atomic and electronic structure of the non-polar 6H-SiC(11-20) and GaN(1-100) surfaces (Comunicazione a convegno)

Type
Label
  • Atomic and electronic structure of the non-polar 6H-SiC(11-20) and GaN(1-100) surfaces (Comunicazione a convegno) (literal)
Anno
  • 2008-01-01T00:00:00+01:00 (literal)
Alternative label
  • Bertelli M.; Wenderoth M.; Rizzi A.; Homoth J.; Loeptien P.; Malindretos J.; Ulbrich R.; Righi M.; Martin-Samos L.; Bertoni C.; Catellani A. (2008)
    Atomic and electronic structure of the non-polar 6H-SiC(11-20) and GaN(1-100) surfaces
    in 29th International Conference on the Physics of Semiconductors, Rio de Janeiro (BR)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Bertelli M.; Wenderoth M.; Rizzi A.; Homoth J.; Loeptien P.; Malindretos J.; Ulbrich R.; Righi M.; Martin-Samos L.; Bertoni C.; Catellani A. (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#note
  • In: ICPS 2008 - 29th International Conference on the Physics of Semiconductors (Rio de Janeiro (BR), 27 Luglio - 1 Agosto 2008). (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#descrizioneSinteticaDelProdotto
  • Filled and empty states STM topographies with atomic corrugation were measured for non-polar 6H-SiC(11-20) and GaN(1-100) surfaces. The experimental STM topographies show unreconstructed surfaces for both 6H-SiC and GaN in agreement with theory. (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • Physikalisches Institut and Virtual Institute of Spin Electronics (VISel), CNR-INFM, Modena - S3 and Dept. of Physics, University of Modena and Reggio Emilia, IT- 41100 Modena, Italy, CNR-INFM, Modena - S3 and CNR-IMEM, Parma (literal)
Titolo
  • Atomic and electronic structure of the non-polar 6H-SiC(11-20) and GaN(1-100) surfaces (literal)
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