SiC epitaxial growth on Si(100) substrates using carbon tetrabromide (Abstract/Poster in convegno)

Type
Label
  • SiC epitaxial growth on Si(100) substrates using carbon tetrabromide (Abstract/Poster in convegno) (literal)
Anno
  • 2009-01-01T00:00:00+01:00 (literal)
Alternative label
  • Attolini G.; Bosi M.; Rossi F.; Watts B. E.; Salviati G.; Battistig G.; Dobos L.; Pecz B. (2009)
    SiC epitaxial growth on Si(100) substrates using carbon tetrabromide
    in 13th International Conference on Silicon Carbide and Related Materials (ICSCRM), Nurnberg (Germany)
    (literal)
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  • Attolini G.; Bosi M.; Rossi F.; Watts B. E.; Salviati G.; Battistig G.; Dobos L.; Pecz B. (literal)
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  • In: ICSCRM 2009 - 13th International Conference on Silicon Carbide and Related Materials (ICSCRM) (Nurnberg (Germany), 11-16 ottobre 2009). (literal)
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  • 3C-SiC films were grown on Si by VPE using CBr4 as the carbon source, at temperatures ranging from 1100 to 1250°C. XRD, TEM, AFM, and SEM results indicate that the epitaxy proceeds as a 3D growth of uncoalesced islands at low temperature, whereas a continuous layer with hillocks on top is obtained above 1200°C. The shape and faceting of the islands are analyzed by AFM, showing (311) preferred facets. (literal)
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  • CNR-IMEM, Parma, Research Institute for Technical Physics and Materials Science, Hungarian Academy of Sciences, P.O. Box 49, H-1525 Budapest, Hungary (literal)
Titolo
  • SiC epitaxial growth on Si(100) substrates using carbon tetrabromide (literal)
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