InAs/InGaAs nanostructures emitting at 1.50 um obtained by a combined approach of quantum dot strain engineering and barrier enhancing (Comunicazione a convegno)

Type
Label
  • InAs/InGaAs nanostructures emitting at 1.50 um obtained by a combined approach of quantum dot strain engineering and barrier enhancing (Comunicazione a convegno) (literal)
Anno
  • 2007-01-01T00:00:00+01:00 (literal)
Alternative label
  • Seravalli L., Frigeri P., Avanzini V., Franchi S. (2007)
    InAs/InGaAs nanostructures emitting at 1.50 um obtained by a combined approach of quantum dot strain engineering and barrier enhancing
    in 14th Euro-MBE Workshop, Sierra Nevada (E)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Seravalli L., Frigeri P., Avanzini V., Franchi S. (literal)
Titolo
  • InAs/InGaAs nanostructures emitting at 1.50 um obtained by a combined approach of quantum dot strain engineering and barrier enhancing (literal)
Prodotto di
Autore CNR

Incoming links:


Autore CNR di
Prodotto
data.CNR.it