1.50 um RT emission from strain-engineered InAs/InGaAs QDs (on GaAs) with additional InAlAs barriers (Comunicazione a convegno)

Type
Label
  • 1.50 um RT emission from strain-engineered InAs/InGaAs QDs (on GaAs) with additional InAlAs barriers (Comunicazione a convegno) (literal)
Anno
  • 2007-01-01T00:00:00+01:00 (literal)
Alternative label
  • Seravalli L., Frigeri P., Allegri P., Avanzini V., Franchi S. (2007)
    1.50 um RT emission from strain-engineered InAs/InGaAs QDs (on GaAs) with additional InAlAs barriers
    in SANDIE Optics Taskforce Meeting, Berlin (D)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Seravalli L., Frigeri P., Allegri P., Avanzini V., Franchi S. (literal)
Titolo
  • 1.50 um RT emission from strain-engineered InAs/InGaAs QDs (on GaAs) with additional InAlAs barriers (literal)
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Autore CNR

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