http://www.cnr.it/ontology/cnr/individuo/prodotto/ID101

Role of Si self-interstitials on the electrical de-activation of B doped Si (Articolo in rivista)

Type

Prodotto della ricerca (Classe)
Articolo in rivista (Classe)

Label

Role of Si self-interstitials on the electrical de-activation of B doped Si (Articolo in rivista) (literal)

Anno

2006-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

10.1016/j.nimb.2005.08.110 (literal)

Alternative label

Piro, AM; Romano, L; Badala, P; Mirabella, S; Grimaldi, MG; Rimini, E (2006)
Role of Si self-interstitials on the electrical de-activation of B doped Si
in Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms (Print); ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS, AMSTERDAM (Paesi Bassi)
(literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

Piro, AM; Romano, L; Badala, P; Mirabella, S; Grimaldi, MG; Rimini, E (literal)

Pagina inizio

656 (literal)

Pagina fine

658 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

242 (literal)

Rivista

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms (Rivista)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali

3 (literal)

Note

ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

INFM, MATIS, I-95123 Catania, Italy; Catania Univ, Dipartimento Fis & Astron, I-95123 Catania, Italy (literal)

Titolo

Role of Si self-interstitials on the electrical de-activation of B doped Si (literal)

Abstract

The off-lattice displacement of B atoms in B-doped Si induced by the irradiation with light ion beam at room temperature has been investigated. A proton beam with energy ranging from 300 to 1300 keV was used to irradiate the single crystal Si samples containing a 400 nm thick surface layer (grown by molecular beam epitaxy) uniformly doped with B at a concentration of 1 x 10(20) B/cm(3). Channelling analyses along the < 100 > axis using the B-11(p,alpha)Be-8 reaction (at 650 keV proton energy) were used to detect the off-lattice displacements of B during irradiation. B is substitutional in the as-grown sample. During irradiation the normalized channelling yield of B chi(B) increases with the ion fluence and saturates at a value chi(F) smaller than unity, being this value independent of the energy of the irradiating beam. No change on the Si channelling yield was detected. The B displacement rate decreases with increasing the beam energy, it is controlled by the generation rate of Si self-interstitials, and it can be fitted by the following formula chi = chi(F) - [chi(F) - chi(0)] *exp(-sigma* N-I), where chi(0) is the chi of the non-irradiated sample, N-I is the fluence of the Si self-interstitials generated by the irradiating beam and sigma is a fitting parameter that accounts for the probability for a self-interstitial to be trapped by substitutional B. Displaced B is not randomly located in the lattice and channelling analyses indicate the formation of a B complex, mediated by B-i intersticialcy diffusion mechanism, partially displaced within the < 100 > channel. (c) 2005 Elsevier B.V. All rights reserved. (literal)

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