semiconductor quantum dots

Label

• semiconductor quantum dots (literal)

Membro di

• Keywords of "Exciton, biexciton and trion recombination dynamics in a single quantum dot under selective optical pumping" (Insieme di parole chiave)
• Keywords of "Quantum dot strain engineering of InAs/InGaAs nanostructures" (Insieme di parole chiave)
• Parole chiave di "Low density InAs/(In)GaAs quantum dots emitting at long wavelengths" (Insieme di parole chiave)
• Keywords of "Modelling of exciton and trion recombination in single quantum dots under selective optical pumping" (Insieme di parole chiave)
• Parole chiave di "The role of wetting layer states on the emission efficiency of InAs/InGaAs metamorphic quantum dot nanostructures" (Insieme di parole chiave)
• Keywords of "1.59 µm room temperature emission from metamorphic InAs/InGaAs quantum dots grown on GaAs substrates" (Insieme di parole chiave)
• Parole chiave di "Quantum dot strain engineering for light emission at 1.3, 1.4 and 1.5 µm" (Insieme di parole chiave)
• Keywords of "Engineering of Quantum Dot Nanostructures for Photonic Devices" (Insieme di parole chiave)
• Parole chiave di "Metamorphic buffers and optical measurement of residual strain" (Insieme di parole chiave)
• Parole chiave di "Effective phonon bottleneck in the carrier thermalization of InAs/GaAs quantum dots" (Insieme di parole chiave)
• Parole chiave di "Integration of site-controlled pyramidal quantum dots and photonic crystal membrane cavities" (Insieme di parole chiave)
• Parole chiave di "Characterization of hydrogen passivated defects in strain-engineered semiconductor quantum dot structures" (Insieme di parole chiave)

Value

• semiconductor quantum dots (literal)

Incoming links:

Ha membro

• Parole chiave di "Low density InAs/(In)GaAs quantum dots emitting at long wavelengths" (Insieme di parole chiave)
• Parole chiave di "Characterization of hydrogen passivated defects in strain-engineered semiconductor quantum dot structures" (Insieme di parole chiave)
• Parole chiave di "The role of wetting layer states on the emission efficiency of InAs/InGaAs metamorphic quantum dot nanostructures" (Insieme di parole chiave)
• Parole chiave di "Metamorphic buffers and optical measurement of residual strain" (Insieme di parole chiave)
• Parole chiave di "Quantum dot strain engineering for light emission at 1.3, 1.4 and 1.5 µm" (Insieme di parole chiave)
• Parole chiave di "Integration of site-controlled pyramidal quantum dots and photonic crystal membrane cavities" (Insieme di parole chiave)
• Keywords of "Modelling of exciton and trion recombination in single quantum dots under selective optical pumping" (Insieme di parole chiave)
• Keywords of "1.59 µm room temperature emission from metamorphic InAs/InGaAs quantum dots grown on GaAs substrates" (Insieme di parole chiave)
• Keywords of "Engineering of Quantum Dot Nanostructures for Photonic Devices" (Insieme di parole chiave)
• Keywords of "Quantum dot strain engineering of InAs/InGaAs nanostructures" (Insieme di parole chiave)
• Keywords of "Exciton, biexciton and trion recombination dynamics in a single quantum dot under selective optical pumping" (Insieme di parole chiave)
• Parole chiave di "Effective phonon bottleneck in the carrier thermalization of InAs/GaAs quantum dots" (Insieme di parole chiave)