TRANSIENT ENHANCED DIFFUSION

Label

• TRANSIENT ENHANCED DIFFUSION (literal)

Membro di

• Keywords of "Substitutional B in Si: Accurate lattice parameter determination" (Insieme di parole chiave)
• Parole chiave di "Fluorine in preamorphized Si: Point defect engineering and control of dopant diffusion" (Insieme di parole chiave)
• Parole chiave di "Evidences of F-induced nanobubbles as sink for self-interstitials in Si" (Insieme di parole chiave)
• Keywords of "He implantation to control B diffusion in crystalline and preamorphized Si" (Insieme di parole chiave)
• Keywords of "He induced nanovoids for point-defect engineering in B-implanted crystalline Si" (Insieme di parole chiave)
• Parole chiave di "New insight on the interaction and diffusion properties of ion beam injected self-interstitials in crystalline silicon" (Insieme di parole chiave)
• Keywords of "Lattice strain of B-B pairs formed by He irradiation in crystalline Si1-xBx/Si" (Insieme di parole chiave)
• Parole chiave di "Experimental evidences for two paths in the dissolution process of B clusters in crystalline Si" (Insieme di parole chiave)
• Keywords of "Investigation of fluorine three-dimensional redistribution during solid-phase-epitaxial-regrowth of amorphous Si" (Insieme di parole chiave)
• Parole chiave di "Atomistic mechanism of boron diffusion in silicon" (Insieme di parole chiave)
• Keywords of "Iso-concentration study of atomistic mechanism of B diffusion in Si" (Insieme di parole chiave)
• Keywords of "High-resolution X-ray diffraction by end of range defects in self-amorphized Ge" (Insieme di parole chiave)
• Keywords of "Formation and evolution of F nanobubbles in amorphous and crystalline Si" (Insieme di parole chiave)

Value

• TRANSIENT ENHANCED DIFFUSION (literal)

Incoming links:

Ha membro

• Parole chiave di "Fluorine in preamorphized Si: Point defect engineering and control of dopant diffusion" (Insieme di parole chiave)
• Keywords of "He implantation to control B diffusion in crystalline and preamorphized Si" (Insieme di parole chiave)
• Keywords of "He induced nanovoids for point-defect engineering in B-implanted crystalline Si" (Insieme di parole chiave)
• Keywords of "Iso-concentration study of atomistic mechanism of B diffusion in Si" (Insieme di parole chiave)
• Keywords of "Substitutional B in Si: Accurate lattice parameter determination" (Insieme di parole chiave)
• Keywords of "Investigation of fluorine three-dimensional redistribution during solid-phase-epitaxial-regrowth of amorphous Si" (Insieme di parole chiave)
• Keywords of "High-resolution X-ray diffraction by end of range defects in self-amorphized Ge" (Insieme di parole chiave)
• Keywords of "Formation and evolution of F nanobubbles in amorphous and crystalline Si" (Insieme di parole chiave)
• Parole chiave di "Atomistic mechanism of boron diffusion in silicon" (Insieme di parole chiave)
• Keywords of "Lattice strain of B-B pairs formed by He irradiation in crystalline Si1-xBx/Si" (Insieme di parole chiave)
• Parole chiave di "Evidences of F-induced nanobubbles as sink for self-interstitials in Si" (Insieme di parole chiave)
• Parole chiave di "Experimental evidences for two paths in the dissolution process of B clusters in crystalline Si" (Insieme di parole chiave)
• Parole chiave di "New insight on the interaction and diffusion properties of ion beam injected self-interstitials in crystalline silicon" (Insieme di parole chiave)