SILICON-CARBIDE

Label

• SILICON-CARBIDE (literal)

Membro di

• Parole chiave di "Structural and electrical characterization of n(+)-type ion-implanted 6H-SiC" (Insieme di parole chiave)
• Keywords of "Spectroscopic study of beta-SiC prepared via PLD at 1064 nm" (Insieme di parole chiave)
• Keywords of "High-Dose Phosphorus-Implanted 4H-SiC: Microwave and Conventional Post-Implantation Annealing at Temperatures >= 1700 degrees C" (Insieme di parole chiave)
• Keywords of "Self-organization of gold nanoclusters on hexagonal SiC and SiO2 surfaces" (Insieme di parole chiave)
• Keywords of "Structural and transport properties in alloyed Ti/Al Ohmic contacts formed on p-type Al-implanted 4H-SiC annealed at high temperature" (Insieme di parole chiave)
• Parole chiave di "Polarization properties of (1(1)over-bar00) and (11(2)over-bar0) SiC surfaces from first principles" (Insieme di parole chiave)
• Keywords of "Synthesis of heteroepytaxial 3C-SiC by means of PLD" (Insieme di parole chiave)
• Parole chiave di "Surface-induced stacking transition at SiC(0001)" (Insieme di parole chiave)
• Keywords of "Size-dependent Schottky barrier height in self-assembled gold nanoparticles" (Insieme di parole chiave)
• Keywords of "Preferential oxidation of stacking faults in epitaxial off-axis (111) 3C-SiC films" (Insieme di parole chiave)
• Parole chiave di "Pulsed laser ablation of SiC in a nitrogen atmosphere: formation of CN" (Insieme di parole chiave)
• Keywords of "Characterization of Dispersion-hardened Electrodeposited Gold Composites. Part 1: a SIMS and SEM study of Powder Inclusion" (Insieme di parole chiave)
• Keywords of "Post-implantation annealing of SiC: relevance of the heating rate" (Insieme di parole chiave)
• Parole chiave di "Identification and tackling of a parasitic surface compound in SiC and Si-rich carbide films" (Insieme di parole chiave)

Value

• SILICON-CARBIDE (literal)

Incoming links:

Ha membro

• Keywords of "Structural and transport properties in alloyed Ti/Al Ohmic contacts formed on p-type Al-implanted 4H-SiC annealed at high temperature" (Insieme di parole chiave)
• Keywords of "Size-dependent Schottky barrier height in self-assembled gold nanoparticles" (Insieme di parole chiave)
• Keywords of "Self-organization of gold nanoclusters on hexagonal SiC and SiO2 surfaces" (Insieme di parole chiave)
• Keywords of "Preferential oxidation of stacking faults in epitaxial off-axis (111) 3C-SiC films" (Insieme di parole chiave)
• Keywords of "High-Dose Phosphorus-Implanted 4H-SiC: Microwave and Conventional Post-Implantation Annealing at Temperatures >= 1700 degrees C" (Insieme di parole chiave)
• Parole chiave di "Identification and tackling of a parasitic surface compound in SiC and Si-rich carbide films" (Insieme di parole chiave)
• Keywords of "Spectroscopic study of beta-SiC prepared via PLD at 1064 nm" (Insieme di parole chiave)
• Keywords of "Synthesis of heteroepytaxial 3C-SiC by means of PLD" (Insieme di parole chiave)
• Parole chiave di "Polarization properties of (1(1)over-bar00) and (11(2)over-bar0) SiC surfaces from first principles" (Insieme di parole chiave)
• Keywords of "Characterization of Dispersion-hardened Electrodeposited Gold Composites. Part 1: a SIMS and SEM study of Powder Inclusion" (Insieme di parole chiave)
• Parole chiave di "Surface-induced stacking transition at SiC(0001)" (Insieme di parole chiave)
• Keywords of "Post-implantation annealing of SiC: relevance of the heating rate" (Insieme di parole chiave)
• Parole chiave di "Pulsed laser ablation of SiC in a nitrogen atmosphere: formation of CN" (Insieme di parole chiave)
• Parole chiave di "Structural and electrical characterization of n(+)-type ion-implanted 6H-SiC" (Insieme di parole chiave)